Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells

R. A. Kaindl, M. Woerner, M. Wurm, K. Reimann, T. Elsaesser, C. Miesner, K. Brunner, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells is studied both experimentally and theoretically. Pump-probe experiments with 150-fs midinfrared pulses yield a lifetime of holes in the second heavy-hole subband of only 250 fs for 4.4-nm wide wells with x = 0.5. This short lifetime is caused by interaction with phonons via the optical deformation potential. Calculations of hole-phonon scattering agree very well with the experimental results. The calculations show that longer heavy-hole lifetimes are possible by increasing the Ge content and the well widths.

Original languageEnglish (US)
Pages (from-to)255-258
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Mar 2002
Externally publishedYes


  • Intersubband relaxation
  • Optical deformation potential
  • SiGe quantum wells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells'. Together they form a unique fingerprint.

Cite this