Photoconductive devices, prefabricated on semi-insulating InP, were integrated on glass substrates using hydrogen-induced layer transfer (ion-cut) combined with adhesive bonding. The prefabricated photodetectors were implanted through by hydrogen ions and transferred twice to achieve device-up configuration. The transferred devices exhibited both higher photocurrent and dark current when compared with bulk devices. Transient response measurement showed a long-lived tail that persisted after the initial "fast" response, indicative of trapmediated transport due to the implant-related localized states. Our study showed that the ion-cutting layer transfer process yielded functional photodetectors. The residual defects remain a challenging issue for the ion-cut process.
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy