Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

J. L. Taggart; R. B. Jacobs-Gedrim; M. L. McLain; Hugh Barnaby; E. S. Bielejec; W. Hardy; M. J. Marinella; Michael Kozicki; Keith Holbert

doi:10.1109/TNS.2018.2882529

Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

J. L. Taggart, R. B. Jacobs-Gedrim, M. L. McLain, Hugh Barnaby, E. S. Bielejec, W. Hardy, M. J. Marinella, Michael Kozicki, Keith Holbert

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

With the growing interest to explore Jupiter's moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive-bridging random access memory (CBRAM) is a nonvolatile memory that has shown a high tolerance to total ionizing dose (TID). However, it is not well understood how CBRAM behaves in an energetic ion environment where displacement damage (DD) effects may also be an issue. In this paper, the response of CBRAM to 100-keV Li, 1-MeV Ta, and 200-keV Si ion irradiations is examined. Ion bombardment was performed with increasing fluence steps until the CBRAM devices failed to hold their programed state. The TID and DD dose (DDD) at the fluence of failure were calculated and compared against tested ion species. Results indicate that failures are more highly correlated with TID than DDD. DC cycling tests were performed during 100-keV Li irradiations and evidence was found that the mobile Ag ion supply diminished with increasing fluence. The cycling results, in addition to prior 14-MeV neutron work, suggest that DD may play a role in the eventual failure of a CBRAM device in a combined radiation environment.

Original language	English (US)
Article number	8542703
Pages (from-to)	69-76
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2018.2882529
State	Published - Jan 2019

Keywords

Chalcogenide glass
conductive bridging
conductive-bridging random access memory (CBRAM) displacement damage (DD)
dose effects
electrochemical metallization
ionizing radiation
memristors
nanoionic memory
radiation effects
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2018.2882529

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@article{389df4fca9ff428bb98dce920df1a4b3,

title = "Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects",

abstract = "With the growing interest to explore Jupiter's moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive-bridging random access memory (CBRAM) is a nonvolatile memory that has shown a high tolerance to total ionizing dose (TID). However, it is not well understood how CBRAM behaves in an energetic ion environment where displacement damage (DD) effects may also be an issue. In this paper, the response of CBRAM to 100-keV Li, 1-MeV Ta, and 200-keV Si ion irradiations is examined. Ion bombardment was performed with increasing fluence steps until the CBRAM devices failed to hold their programed state. The TID and DD dose (DDD) at the fluence of failure were calculated and compared against tested ion species. Results indicate that failures are more highly correlated with TID than DDD. DC cycling tests were performed during 100-keV Li irradiations and evidence was found that the mobile Ag ion supply diminished with increasing fluence. The cycling results, in addition to prior 14-MeV neutron work, suggest that DD may play a role in the eventual failure of a CBRAM device in a combined radiation environment.",

keywords = "Chalcogenide glass, conductive bridging, conductive-bridging random access memory (CBRAM) displacement damage (DD), dose effects, electrochemical metallization, ionizing radiation, memristors, nanoionic memory, radiation effects, total ionizing dose (TID)",

author = "Taggart, {J. L.} and Jacobs-Gedrim, {R. B.} and McLain, {M. L.} and Hugh Barnaby and Bielejec, {E. S.} and W. Hardy and Marinella, {M. J.} and Michael Kozicki and Keith Holbert",

note = "Funding Information: Manuscript received October 2, 2018; accepted November 5, 2018. Date of publication November 21, 2018; date of current version January 17, 2019. This work was supported by the Department of the Defense, Defense Threat Reduction Agency under Grant HDTRA1-17-1-0038 and in part by the Air Force Research Laboratory Det 8/RVKVE under Grant FA9452-13-1-0288. Funding Information: This work was supported by the Department of the Defense, Defense Threat Reduction Agency under Grant HDTRA1-17-1-0038 and in part by the Air Force Research Laboratory Det 8/RVKVE under Grant FA9452-13-1-0288. Funding Information: ACKNOWLEDGMENT The authors would like to thank J. Calkins of DTRA and A. Edwards, J. Mee, and K. Bole of AFRL for their support of this paper. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract DE-NA-0003525. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

month = jan,

doi = "10.1109/TNS.2018.2882529",

language = "English (US)",

volume = "66",

pages = "69--76",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

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T1 - Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

AU - Taggart, J. L.

AU - Jacobs-Gedrim, R. B.

AU - McLain, M. L.

AU - Barnaby, Hugh

AU - Bielejec, E. S.

AU - Hardy, W.

AU - Marinella, M. J.

AU - Kozicki, Michael

AU - Holbert, Keith

N1 - Funding Information: Manuscript received October 2, 2018; accepted November 5, 2018. Date of publication November 21, 2018; date of current version January 17, 2019. This work was supported by the Department of the Defense, Defense Threat Reduction Agency under Grant HDTRA1-17-1-0038 and in part by the Air Force Research Laboratory Det 8/RVKVE under Grant FA9452-13-1-0288. Funding Information: This work was supported by the Department of the Defense, Defense Threat Reduction Agency under Grant HDTRA1-17-1-0038 and in part by the Air Force Research Laboratory Det 8/RVKVE under Grant FA9452-13-1-0288. Funding Information: ACKNOWLEDGMENT The authors would like to thank J. Calkins of DTRA and A. Edwards, J. Mee, and K. Bole of AFRL for their support of this paper. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under Contract DE-NA-0003525. Publisher Copyright: © 1963-2012 IEEE.

PY - 2019/1

Y1 - 2019/1

N2 - With the growing interest to explore Jupiter's moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive-bridging random access memory (CBRAM) is a nonvolatile memory that has shown a high tolerance to total ionizing dose (TID). However, it is not well understood how CBRAM behaves in an energetic ion environment where displacement damage (DD) effects may also be an issue. In this paper, the response of CBRAM to 100-keV Li, 1-MeV Ta, and 200-keV Si ion irradiations is examined. Ion bombardment was performed with increasing fluence steps until the CBRAM devices failed to hold their programed state. The TID and DD dose (DDD) at the fluence of failure were calculated and compared against tested ion species. Results indicate that failures are more highly correlated with TID than DDD. DC cycling tests were performed during 100-keV Li irradiations and evidence was found that the mobile Ag ion supply diminished with increasing fluence. The cycling results, in addition to prior 14-MeV neutron work, suggest that DD may play a role in the eventual failure of a CBRAM device in a combined radiation environment.

AB - With the growing interest to explore Jupiter's moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive-bridging random access memory (CBRAM) is a nonvolatile memory that has shown a high tolerance to total ionizing dose (TID). However, it is not well understood how CBRAM behaves in an energetic ion environment where displacement damage (DD) effects may also be an issue. In this paper, the response of CBRAM to 100-keV Li, 1-MeV Ta, and 200-keV Si ion irradiations is examined. Ion bombardment was performed with increasing fluence steps until the CBRAM devices failed to hold their programed state. The TID and DD dose (DDD) at the fluence of failure were calculated and compared against tested ion species. Results indicate that failures are more highly correlated with TID than DDD. DC cycling tests were performed during 100-keV Li irradiations and evidence was found that the mobile Ag ion supply diminished with increasing fluence. The cycling results, in addition to prior 14-MeV neutron work, suggest that DD may play a role in the eventual failure of a CBRAM device in a combined radiation environment.

KW - Chalcogenide glass

KW - conductive bridging

KW - conductive-bridging random access memory (CBRAM) displacement damage (DD)

KW - dose effects

KW - electrochemical metallization

KW - ionizing radiation

KW - memristors

KW - nanoionic memory

KW - radiation effects

KW - total ionizing dose (TID)

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Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

Abstract

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