Electron-beam lithography and reactive ion etching were used to process silicon-on-insulator substrates for the fabrication of single cylindrical high-aspect-ratio solid-state nanopores and high-packing-density nanopore arrays. Minimum pore diameters of 40 nm were readily achieved with a high yield. The electrolyte concentration dependence of ion transport through single nanopores was measured for pores with diameters ranging from 40 to 140 nm. Measured single-nanopore conductances in high salt concentrations were compared to a simple model using a cylindrical resistance path and bulk solution conductivity. Electrochemical impedance spectroscopy was used to study the ac response of the device.

Original languageEnglish (US)
Pages (from-to)1419-1428
Number of pages10
JournalJournal of Microelectromechanical Systems
Issue number6
StatePublished - Dec 2007


  • Coulter counting
  • Ion channel
  • Micromachining
  • Nanopore
  • Nanoporous array
  • Nanoporous materials
  • Patch clamp
  • Silicon on insulator technology
  • Silicon-on-insulator (SOI)
  • Substrates

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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