Abstract
Electron-beam lithography and reactive ion etching were used to process silicon-on-insulator substrates for the fabrication of single cylindrical high-aspect-ratio solid-state nanopores and high-packing-density nanopore arrays. Minimum pore diameters of 40 nm were readily achieved with a high yield. The electrolyte concentration dependence of ion transport through single nanopores was measured for pores with diameters ranging from 40 to 140 nm. Measured single-nanopore conductances in high salt concentrations were compared to a simple model using a cylindrical resistance path and bulk solution conductivity. Electrochemical impedance spectroscopy was used to study the ac response of the device.
Original language | English (US) |
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Pages (from-to) | 1419-1428 |
Number of pages | 10 |
Journal | Journal of Microelectromechanical Systems |
Volume | 16 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2007 |
Keywords
- Coulter counting
- Ion channel
- Micromachining
- Nanopore
- Nanoporous array
- Nanoporous materials
- Patch clamp
- Silicon on insulator technology
- Silicon-on-insulator (SOI)
- Substrates
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering