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Fabrication and opto-electric properties of silicon based heterojunction SIS cells

  • Bo He
  • , Quan Ma Zhong
  • , Jing Xu
  • , Fei Yun
  • , Ying Hui Tang
  • , Lei Zhao
  • , Nan Sheng Zhang
  • , Feng Li
  • , Cheng Shen
  • , Ling Shen
  • , Xia Jie Meng
  • , Chengy Yue Zhou
  • , Zheng Shan Yu
  • , Yan Ting Yin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ITO/AZO double films were deposited by RF sputtering on p-Si texturized substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages2409-2411
Number of pages3
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

Keywords

  • Al-doped ZnO (AZO)
  • Current-voltage (I-V) characteristics
  • ITO
  • SIS heterojunction
  • Sputtering

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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