Fabrication and characterization of C implantation standards for Si1-x-yGexCy alloys

T. Laursen; D. Chandrasekhar; Richard Hervig; J. W. Mayer; David Smith; C. Jasper

doi:10.1116/1.1412652

Fabrication and characterization of C implantation standards for Si_1-x-yGe_xC_y alloys

T. Laursen, D. Chandrasekhar, Richard Hervig, J. W. Mayer, David Smith, C. Jasper

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Characterization and fabrication of quantification standards for carbon implantation in silicon alloys was studied using secondary ion mass spectrometry. Relative sensitivity factors (RSF) for carbon in the alloys having germanium (Ge) compositions in the range from 0 to 0.35 were measured. The thickness of implanted films was measured using high-resolution electron microscopy. Rutherford backscattering spectroscopy was employed to obtain Ge concentrations. The RSF for carbon with respect to silicon and Ge was found to decrease with increase of Ge content.

Original language	English (US)
Pages (from-to)	2879-2883
Number of pages	5
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	19
Issue number	6
DOIs	https://doi.org/10.1116/1.1412652
State	Published - Nov 2001

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "Characterization and fabrication of quantification standards for carbon implantation in silicon alloys was studied using secondary ion mass spectrometry. Relative sensitivity factors (RSF) for carbon in the alloys having germanium (Ge) compositions in the range from 0 to 0.35 were measured. The thickness of implanted films was measured using high-resolution electron microscopy. Rutherford backscattering spectroscopy was employed to obtain Ge concentrations. The RSF for carbon with respect to silicon and Ge was found to decrease with increase of Ge content.",

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AU - Laursen, T.

AU - Chandrasekhar, D.

AU - Hervig, Richard

AU - Mayer, J. W.

AU - Smith, David

AU - Jasper, C.

PY - 2001/11

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AB - Characterization and fabrication of quantification standards for carbon implantation in silicon alloys was studied using secondary ion mass spectrometry. Relative sensitivity factors (RSF) for carbon in the alloys having germanium (Ge) compositions in the range from 0 to 0.35 were measured. The thickness of implanted films was measured using high-resolution electron microscopy. Rutherford backscattering spectroscopy was employed to obtain Ge concentrations. The RSF for carbon with respect to silicon and Ge was found to decrease with increase of Ge content.

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Fabrication and characterization of C implantation standards for Si_1-x-yGe_xC_y alloys

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