Fabrication & characterization of Schottky Junction Transistors

Z. Wu, J. Spann, P. C. Jaconelli, J. Yang, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


An analysis of characterization and fabrication of Schottky junction transistors (SJT) was performed. The channel thickness and doping in the proposed device was chosen such that the gate and drain currents vary exponentially with the gate voltage. The d.c. and r.f. measurements of the optimized device were also described. It was found that the channel thickness for the device depends upon the amount of silicon consumed during the silicide reaction.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Number of pages2
StatePublished - 2001
Event2001 IEEE International SOI Conference - Durango, CO, United States
Duration: Oct 1 2001Oct 4 2001


Other2001 IEEE International SOI Conference
Country/TerritoryUnited States
CityDurango, CO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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