Abstract
An analysis of characterization and fabrication of Schottky junction transistors (SJT) was performed. The channel thickness and doping in the proposed device was chosen such that the gate and drain currents vary exponentially with the gate voltage. The d.c. and r.f. measurements of the optimized device were also described. It was found that the channel thickness for the device depends upon the amount of silicon consumed during the silicide reaction.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE International SOI Conference |
| Pages | 73-74 |
| Number of pages | 2 |
| State | Published - 2001 |
| Event | 2001 IEEE International SOI Conference - Durango, CO, United States Duration: Oct 1 2001 → Oct 4 2001 |
Other
| Other | 2001 IEEE International SOI Conference |
|---|---|
| Country/Territory | United States |
| City | Durango, CO |
| Period | 10/1/01 → 10/4/01 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering