Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

Andres Cuevas; Gaelle Giroult-Matlakowski; Paul A. Basore; Christiane DuBois; Richard King

Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

Andres Cuevas, Gaelle Giroult-Matlakowski, Paul A. Basore, Christiane DuBois, Richard King

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An analytical procedure to extract the surface recombination velocity of the SiO₂/n-type silicon interface, S_p, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of S_p are significantly affected by the assumed material parameters for highly doped silicon, τ_p, μ_p and Δ E_g ^app. Updated values for these parameters are used to obtain the dependence of S_p on the phosphorus concentration, N_D, using both previous and new experimental data. The new evidence supports the finding that S_p increases strongly with N_D.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Editors	Anon
Publisher	IEEE
Pages	1446-1449
Number of pages	4
Volume	2
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: Dec 5 1994 → Dec 9 1994

Other

Other	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
City	Waikoloa, HI, USA
Period	12/5/94 → 12/9/94

ASJC Scopus subject areas

Control and Systems Engineering
Condensed Matter Physics

Cite this

Cuevas, A, Giroult-Matlakowski, G, Basore, PA, DuBois, C & King, R 1994, Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2, IEEE, pp. 1446-1449, Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2), Waikoloa, HI, USA, 12/5/94.

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title = "Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters",

abstract = "An analytical procedure to extract the surface recombination velocity of the SiO2/n-type silicon interface, Sp, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of Sp are significantly affected by the assumed material parameters for highly doped silicon, τp, μp and Δ Eg app. Updated values for these parameters are used to obtain the dependence of Sp on the phosphorus concentration, ND, using both previous and new experimental data. The new evidence supports the finding that Sp increases strongly with ND.",

author = "Andres Cuevas and Gaelle Giroult-Matlakowski and Basore, {Paul A.} and Christiane DuBois and Richard King",

year = "1994",

language = "English (US)",

volume = "2",

pages = "1446--1449",

editor = "Anon",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "IEEE",

note = "Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) ; Conference date: 05-12-1994 Through 09-12-1994",

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T1 - Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

AU - Cuevas, Andres

AU - Giroult-Matlakowski, Gaelle

AU - Basore, Paul A.

AU - DuBois, Christiane

AU - King, Richard

PY - 1994

Y1 - 1994

N2 - An analytical procedure to extract the surface recombination velocity of the SiO2/n-type silicon interface, Sp, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of Sp are significantly affected by the assumed material parameters for highly doped silicon, τp, μp and Δ Eg app. Updated values for these parameters are used to obtain the dependence of Sp on the phosphorus concentration, ND, using both previous and new experimental data. The new evidence supports the finding that Sp increases strongly with ND.

AB - An analytical procedure to extract the surface recombination velocity of the SiO2/n-type silicon interface, Sp, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of Sp are significantly affected by the assumed material parameters for highly doped silicon, τp, μp and Δ Eg app. Updated values for these parameters are used to obtain the dependence of Sp on the phosphorus concentration, ND, using both previous and new experimental data. The new evidence supports the finding that Sp increases strongly with ND.

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M3 - Conference contribution

AN - SCOPUS:0028722942

VL - 2

SP - 1446

EP - 1449

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

A2 - Anon, null

PB - IEEE

T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)

Y2 - 5 December 1994 through 9 December 1994

ER -

Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

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ASJC Scopus subject areas

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