Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

S. I. Molina; G. Aragón; Y. González; L. González; F. Briones; F. A. Ponce; R. García

doi:10.1016/0167-577X(93)90094-E

Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

S. I. Molina, G. Aragón, Y. González, L. González, F. Briones, F. A. Ponce, R. García

Research output: Contribution to journal › Article › peer-review

Abstract

A high-resolution electron microscopy (HREM) study on antiphase boundaries in GaAs grown on Si is presented. HREM images of two close antiphase boundaries appearing mainly on the {110} planes which abruptly disappear suggest some ideas on the mechanisms of annihilation of these defects.

Original language	English (US)
Pages (from-to)	353-355
Number of pages	3
Journal	Materials Letters
Volume	15
Issue number	5-6
DOIs	https://doi.org/10.1016/0167-577X(93)90094-E
State	Published - Jan 1993
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0167-577X(93)90094-E

Cite this

@article{6b6ef54891844c25b86f2eb75c265e51,

title = "Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si",

abstract = "A high-resolution electron microscopy (HREM) study on antiphase boundaries in GaAs grown on Si is presented. HREM images of two close antiphase boundaries appearing mainly on the {110} planes which abruptly disappear suggest some ideas on the mechanisms of annihilation of these defects.",

author = "Molina, {S. I.} and G. Arag{\'o}n and Y. Gonz{\'a}lez and L. Gonz{\'a}lez and F. Briones and Ponce, {F. A.} and R. Garc{\'i}a",

year = "1993",

month = jan,

doi = "10.1016/0167-577X(93)90094-E",

language = "English (US)",

volume = "15",

pages = "353--355",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "5-6",

}

TY - JOUR

T1 - Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

AU - Molina, S. I.

AU - Aragón, G.

AU - González, Y.

AU - González, L.

AU - Briones, F.

AU - Ponce, F. A.

AU - García, R.

PY - 1993/1

Y1 - 1993/1

N2 - A high-resolution electron microscopy (HREM) study on antiphase boundaries in GaAs grown on Si is presented. HREM images of two close antiphase boundaries appearing mainly on the {110} planes which abruptly disappear suggest some ideas on the mechanisms of annihilation of these defects.

AB - A high-resolution electron microscopy (HREM) study on antiphase boundaries in GaAs grown on Si is presented. HREM images of two close antiphase boundaries appearing mainly on the {110} planes which abruptly disappear suggest some ideas on the mechanisms of annihilation of these defects.

UR - http://www.scopus.com/inward/record.url?scp=0027146741&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027146741&partnerID=8YFLogxK

U2 - 10.1016/0167-577X(93)90094-E

DO - 10.1016/0167-577X(93)90094-E

M3 - Article

AN - SCOPUS:0027146741

SN - 0167-577X

VL - 15

SP - 353

EP - 355

JO - Materials Letters

JF - Materials Letters

IS - 5-6

ER -

Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

Abstract

ASJC Scopus subject areas

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