Excimer-laser-induced crystallization of hydrogenated amorphous silicon

K. Winer; G. B. Anderson; S. E. Ready; R. Z. Bachrach; R. I. Johnson; F. A. Ponce; J. B. Boyce

doi:10.1063/1.103897

Excimer-laser-induced crystallization of hydrogenated amorphous silicon

K. Winer, G. B. Anderson, S. E. Ready, R. Z. Bachrach, R. I. Johnson, F. A. Ponce, J. B. Boyce

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38 Scopus citations

Abstract

The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

Original language	English (US)
Pages (from-to)	2222-2224
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	21
DOIs	https://doi.org/10.1063/1.103897
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103897

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title = "Excimer-laser-induced crystallization of hydrogenated amorphous silicon",

abstract = "The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.",

author = "K. Winer and Anderson, {G. B.} and Ready, {S. E.} and Bachrach, {R. Z.} and Johnson, {R. I.} and Ponce, {F. A.} and Boyce, {J. B.}",

year = "1990",

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volume = "57",

pages = "2222--2224",

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AU - Winer, K.

AU - Anderson, G. B.

AU - Ready, S. E.

AU - Bachrach, R. Z.

AU - Johnson, R. I.

AU - Ponce, F. A.

AU - Boyce, J. B.

PY - 1990

Y1 - 1990

N2 - The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

AB - The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Excimer-laser-induced crystallization of hydrogenated amorphous silicon

Abstract

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