Erratum: Surface passivation of n-type c-Si wafers by a-Si/SiO 2/SiNx stack with <1 cm/s effective surface recombination velocity (Applied Physics Letters (2013) 103 (183903))

Stanislau Herasimenka, Clarence J. Tracy, Vivek Sharma, Natasa Vulic, William J. Dauksher, Stuart Bowden

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish (US)
Article number219901
JournalApplied Physics Letters
Issue number21
StatePublished - Nov 18 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this