Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry

Keyphrases

• Strain Engineering 100%
• Device Structure 100%
• SiGe 100%
• Material Structure 100%
• Engineered Materials 100%
• Epitaxy 100%
• Molecular Chemistry 100%
• Engineered Device 100%
• Optical Properties 50%
• Epitaxial 50%
• Low Temperature 50%
• Tensile Strain 50%
• Ge Layer 50%
• Competition Process 25%
• Si Substrate 25%
• Single chip 25%
• Microelectronics 25%
• Photodiode 25%
• Growth Process 25%
• Energy Conservation 25%
• Heterostructure 25%
• Surface Energy 25%
• Thermally Stable 25%
• Active-passive 25%
• High Mobility 25%
• Selective Area Growth 25%
• Si(111) 25%
• Si Surface 25%
• CVD Growth 25%
• Dissimilar Materials 25%
• Growth Strategy 25%
• Dislocation Density 25%
• Optical Components 25%
• Growth Mechanism 25%
• Practical Utility 25%
• Si Film 25%
• Low-temperature CVD 25%
• Metal-organic Materials 25%
• Epilayer 25%
• Biaxial Strain 25%
• Mobility Devices 25%
• Tuning Strategy 25%
• Heteroepitaxy 25%
• Layer-by-layer Growth 25%
• Sn Content 25%
• Ge Buffer 25%
• Film Morphology 25%
• Optical Gap 25%
• Carbon-free 25%
• Stranski-Krastanov Growth 25%
• Film Microstructure 25%
• Group IV Materials 25%
• Strain State 25%
• Strained Ge 25%
• Via Formation 25%
• Microstructure Morphology 25%
• Drain Regions 25%
• CH 4 25%
• Molecular Mixtures 25%
• Atomically Smooth 25%
• Organic Additives 25%
• Chemisorption Energy 25%
• Surface Reactivity 25%
• Lomer Dislocation 25%
• Microstructure Tuning 25%
• Strain Tuning 25%

Material Science

• Film 100%
• Epitaxy 100%
• Optical Property 40%
• Tensile Strain 40%
• Heterojunction 20%
• Density 20%
• Surface Energy 20%
• Optical Device 20%
• Chemical Vapor Deposition 20%
• Epilayers 20%
• Heteroepitaxy 20%
• Chemisorption 20%
• Phase Composition 20%
• Surface (Surface Science) 20%