1 Scopus citations


Structural features, related to epitaxial growth and crystal defect creation in common III-V and Si-Ge materials were investigated by high-resolution x-ray diffraction and Transmission Electron Microscopy. Strong correlations between crystal perfection of epitaxial structures and growth conditions, specified by the initial elastic strain, deposition temperature and growth rate, elastic properties of epitaxial structures and thickness of epitaxial layers, were revealed. The investigations allowed suggest phenomenological model of defect creation in epitaxial structures, specify four different stages of defect creation, preferred crystalline defects, their density and spatial distribution in the volume. The main crystalline defect, responsible for deterioration of crystal perfection and physical properties of epitaxial structures were identified. Correct description of defect creation allows improved growth conditions and design of future devices to avoid/minimize deterioration of physical properties due to initially deteriorated growth conditions.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781479943982
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014


Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States


  • crystal perfection of epitaxial structures
  • epitaxial growth and defect creation
  • high-resolution x-ray diffraction
  • solar cells
  • transmission electron microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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