Epitaxial growth of Si deposited on (100) Si

L. S. Hung, S. S. Lau, M. Von Allmen, J. W. Mayer, B. M. Ullrich, J. E. Baker, P. Williams, W. F. Tseng

Research output: Contribution to journalArticlepeer-review

54 Scopus citations


Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in self-ion-implanted-amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (∼50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary-ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (∼2 Å/sec) deposition, epitaxial growth rates are significantly slower.

Original languageEnglish (US)
Pages (from-to)909-911
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - 1980
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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