Epitaxial growth of cdte on (211) silicon mesas formed by deep reactive ion etching

Jay Molstad; Phil Boyd; Justin Markunas; David Smith; E. D. Smith; Eli Gordon; J. H. Dinan

doi:10.1007/s11664-006-0210-1

Epitaxial growth of cdte on (211) silicon mesas formed by deep reactive ion etching

Jay Molstad, Phil Boyd, Justin Markunas, David Smith, E. D. Smith, Eli Gordon, J. H. Dinan

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

By patterning a (211) Si substrate wafer into mesas and depositing CdTe onto this substrate by molecular beam epitaxy (MBE), we achieved the removal of nearly all threading dislocations from the epilayer. Faceting of mesa surfaces is observed and characterized. Deposition of CdTe on mesa sidewalls nucleates stacking faults along the (111) planes, which result in nonradiative carrier recombination. The density of these stacking faults can be reduced if care is taken to align the molecular beams from the effusion cells with particular crystallographic directions of the substrate.

Original language	English (US)
Pages (from-to)	1636-1640
Number of pages	5
Journal	Journal of Electronic Materials
Volume	35
Issue number	8
DOIs	https://doi.org/10.1007/s11664-006-0210-1
State	Published - Aug 2006

Keywords

CdTe
Focal plane array
Molecular beam epitaxy (MBE)
Threading dislocations

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s11664-006-0210-1

Cite this

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title = "Epitaxial growth of cdte on (211) silicon mesas formed by deep reactive ion etching",

abstract = "By patterning a (211) Si substrate wafer into mesas and depositing CdTe onto this substrate by molecular beam epitaxy (MBE), we achieved the removal of nearly all threading dislocations from the epilayer. Faceting of mesa surfaces is observed and characterized. Deposition of CdTe on mesa sidewalls nucleates stacking faults along the (111) planes, which result in nonradiative carrier recombination. The density of these stacking faults can be reduced if care is taken to align the molecular beams from the effusion cells with particular crystallographic directions of the substrate.",

keywords = "CdTe, Focal plane array, Molecular beam epitaxy (MBE), Threading dislocations",

author = "Jay Molstad and Phil Boyd and Justin Markunas and David Smith and Smith, {E. D.} and Eli Gordon and Dinan, {J. H.}",

note = "Funding Information: The authors thank David Benson and John Varesi for assistance with the lithography and Randy Jacobs for assistance in interpreting the TEM data. Dr. Molstad is supported by a Postdoctoral Research Associateship Award from the National Research Council, and is grateful for ILIR funding from the United States Army.",

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doi = "10.1007/s11664-006-0210-1",

language = "English (US)",

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T1 - Epitaxial growth of cdte on (211) silicon mesas formed by deep reactive ion etching

AU - Molstad, Jay

AU - Boyd, Phil

AU - Markunas, Justin

AU - Smith, David

AU - Smith, E. D.

AU - Gordon, Eli

AU - Dinan, J. H.

N1 - Funding Information: The authors thank David Benson and John Varesi for assistance with the lithography and Randy Jacobs for assistance in interpreting the TEM data. Dr. Molstad is supported by a Postdoctoral Research Associateship Award from the National Research Council, and is grateful for ILIR funding from the United States Army.

PY - 2006/8

Y1 - 2006/8

N2 - By patterning a (211) Si substrate wafer into mesas and depositing CdTe onto this substrate by molecular beam epitaxy (MBE), we achieved the removal of nearly all threading dislocations from the epilayer. Faceting of mesa surfaces is observed and characterized. Deposition of CdTe on mesa sidewalls nucleates stacking faults along the (111) planes, which result in nonradiative carrier recombination. The density of these stacking faults can be reduced if care is taken to align the molecular beams from the effusion cells with particular crystallographic directions of the substrate.

AB - By patterning a (211) Si substrate wafer into mesas and depositing CdTe onto this substrate by molecular beam epitaxy (MBE), we achieved the removal of nearly all threading dislocations from the epilayer. Faceting of mesa surfaces is observed and characterized. Deposition of CdTe on mesa sidewalls nucleates stacking faults along the (111) planes, which result in nonradiative carrier recombination. The density of these stacking faults can be reduced if care is taken to align the molecular beams from the effusion cells with particular crystallographic directions of the substrate.

KW - CdTe

KW - Focal plane array

KW - Molecular beam epitaxy (MBE)

KW - Threading dislocations

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JO - Journal of Electronic Materials

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Epitaxial growth of cdte on (211) silicon mesas formed by deep reactive ion etching

Abstract

Keywords

ASJC Scopus subject areas

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