Epitaxial Cu contacts on semiconducting diamond

P. K. Baumann; T. P. Humphreys; R. J. Nemanich; K. Ishibashi; N. R. Parikh; L. M. Porter; R. F. Davis

doi:10.1016/0925-9635(94)90292-5

Epitaxial Cu contacts on semiconducting diamond

P. K. Baumann, T. P. Humphreys, R. J. Nemanich, K. Ishibashi, N. R. Parikh, L. M. Porter, R. F. Davis

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in situ low-energy electron diffraction, the as-deposited layers were shown to be epitaxial, with χ_Cu = 49%. In addition, the technique of atomic force microscopy has demonstrated island morphology, indicative of three-dimensional growth. Moreover, the Cu films displayed excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have shown rectifying characteristics. In addition, a Schottky barrier height of Φ_B ≈ 1.1 eV has been determined from ultraviolet photoemission spectroscopy.

Original language	English (US)
Pages (from-to)	883-886
Number of pages	4
Journal	Diamond and Related Materials
Volume	3
Issue number	4-6
DOIs	https://doi.org/10.1016/0925-9635(94)90292-5
State	Published - Apr 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Chemistry(all)
Electrical and Electronic Engineering

Access to Document

10.1016/0925-9635(94)90292-5

Cite this

@article{a87de0811e844222b8d3b93e7c2c552e,

title = "Epitaxial Cu contacts on semiconducting diamond",

abstract = "In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in situ low-energy electron diffraction, the as-deposited layers were shown to be epitaxial, with χCu = 49%. In addition, the technique of atomic force microscopy has demonstrated island morphology, indicative of three-dimensional growth. Moreover, the Cu films displayed excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have shown rectifying characteristics. In addition, a Schottky barrier height of ΦB ≈ 1.1 eV has been determined from ultraviolet photoemission spectroscopy.",

author = "Baumann, {P. K.} and Humphreys, {T. P.} and Nemanich, {R. J.} and K. Ishibashi and Parikh, {N. R.} and Porter, {L. M.} and Davis, {R. F.}",

year = "1994",

month = apr,

doi = "10.1016/0925-9635(94)90292-5",

language = "English (US)",

volume = "3",

pages = "883--886",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "4-6",

}

TY - JOUR

T1 - Epitaxial Cu contacts on semiconducting diamond

AU - Baumann, P. K.

AU - Humphreys, T. P.

AU - Nemanich, R. J.

AU - Ishibashi, K.

AU - Parikh, N. R.

AU - Porter, L. M.

AU - Davis, R. F.

PY - 1994/4

Y1 - 1994/4

N2 - In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in situ low-energy electron diffraction, the as-deposited layers were shown to be epitaxial, with χCu = 49%. In addition, the technique of atomic force microscopy has demonstrated island morphology, indicative of three-dimensional growth. Moreover, the Cu films displayed excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have shown rectifying characteristics. In addition, a Schottky barrier height of ΦB ≈ 1.1 eV has been determined from ultraviolet photoemission spectroscopy.

AB - In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in situ low-energy electron diffraction, the as-deposited layers were shown to be epitaxial, with χCu = 49%. In addition, the technique of atomic force microscopy has demonstrated island morphology, indicative of three-dimensional growth. Moreover, the Cu films displayed excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have shown rectifying characteristics. In addition, a Schottky barrier height of ΦB ≈ 1.1 eV has been determined from ultraviolet photoemission spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0028416874&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028416874&partnerID=8YFLogxK

U2 - 10.1016/0925-9635(94)90292-5

DO - 10.1016/0925-9635(94)90292-5

M3 - Article

AN - SCOPUS:0028416874

SN - 0925-9635

VL - 3

SP - 883

EP - 886

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 4-6

ER -

Epitaxial Cu contacts on semiconducting diamond

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this