Ensemble Monte Carlo simulation of Raman scattering in GaAs

Selim E. Guencer, David K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the Γ conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 × 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDavid K. Ferry, Henry M. van Driel
Number of pages8
StatePublished - Dec 1 1994
EventUltrafast Phenomena in Semiconductors - Los Angeles, CA, USA
Duration: Jan 27 1994Jan 28 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherUltrafast Phenomena in Semiconductors
CityLos Angeles, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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