Ensemble Monte Carlo simulation of femtosecond photoexcitation in AlGaAs

Selim E. Guencer, David K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Femtosecond photoexcitation experiments have been used by many groups to investigate ultrafast scattering processes in semiconductors. Information on intervalley scattering rates can readily be deduced by monitoring valley populations in real time, and particularly, a number of groups have made measurements for Γ-L and Γ-X intervalley scattering in GaAs. However, due to the direct gap, the L-X scattering in GaAs can not be directly monitored. Recently, experiments to monitor the X valley population in indirect AlGaAs have been performed, and utilized to set up an upper bound for the L-X scattering lifetime. We have used an ensemble Monte Carlo (EMC) technique to calculate the evolution of valley populations in indirect AlGaAs illuminated by a femtosecond pulse laser. The time evolution of electron populations in the Γ, L and X valleys is studied by varying the intervalley coupling constants. The L-X intervalley deformation potential is found to be DXL = 1.5 ± 0.5 × 108 eV/cm.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Number of pages7
ISBN (Print)0819408387
StatePublished - 1992
EventUltrafast Laser Probe Phenomena in Semiconductors and Superconductors - Somerset, NJ, USA
Duration: Mar 24 1992Mar 25 1992


OtherUltrafast Laser Probe Phenomena in Semiconductors and Superconductors
CitySomerset, NJ, USA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


Dive into the research topics of 'Ensemble Monte Carlo simulation of femtosecond photoexcitation in AlGaAs'. Together they form a unique fingerprint.

Cite this