Abstract
Femtosecond photoexcitation experiments have been used by many groups to investigate ultrafast scattering processes in semiconductors. Information on intervalley scattering rates can readily be deduced by monitoring valley populations in real time, and particularly, a number of groups have made measurements for Γ-L and Γ-X intervalley scattering in GaAs. However, due to the direct gap, the L-X scattering in GaAs can not be directly monitored. Recently, experiments to monitor the X valley population in indirect AlGaAs have been performed, and utilized to set up an upper bound for the L-X scattering lifetime. We have used an ensemble Monte Carlo (EMC) technique to calculate the evolution of valley populations in indirect AlGaAs illuminated by a femtosecond pulse laser. The time evolution of electron populations in the Γ, L and X valleys is studied by varying the intervalley coupling constants. The L-X intervalley deformation potential is found to be DXL = 1.5 ± 0.5 × 108 eV/cm.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Place of Publication | Bellingham, WA, United States |
| Publisher | Publ by Int Soc for Optical Engineering |
| Pages | 68-74 |
| Number of pages | 7 |
| Volume | 1677 |
| ISBN (Print) | 0819408387 |
| State | Published - 1992 |
| Event | Ultrafast Laser Probe Phenomena in Semiconductors and Superconductors - Somerset, NJ, USA Duration: Mar 24 1992 → Mar 25 1992 |
Other
| Other | Ultrafast Laser Probe Phenomena in Semiconductors and Superconductors |
|---|---|
| City | Somerset, NJ, USA |
| Period | 3/24/92 → 3/25/92 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics