Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO                          2                          layers sandwiched between thicker SiO                         2                          layers

C. L. Hinkle; C. Fulton; R. J. Nemanich; G. Lucovsky

doi:10.1016/j.apsusc.2004.05.076

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO ₂ layers sandwiched between thicker SiO ₂ layers

C. L. Hinkle
, C. Fulton
, R. J. Nemanich
, G. Lucovsky

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, E _B , and the effective electron tunneling mass, m _eff , which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

Original language	English (US)
Pages (from-to)	240-245
Number of pages	6
Journal	Applied Surface Science
Volume	234
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.05.076
State	Published - Jul 15 2004
Externally published	Yes
Event	The Ninth International Conference on the Formation of Semicon - Madrid, Spain Duration: Sep 15 2003 → Sep 19 2003

Keywords

Direct tunneling
High-K dielectrics
Stacked gate dielectrics
Tunneling mass-conduction band offset energy product

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2004.05.076

Cite this

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO ₂ layers sandwiched between thicker SiO ₂ layers Applied Surface Science, 234(1-4), 240-245. https://doi.org/10.1016/j.apsusc.2004.05.076

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO ₂ layers sandwiched between thicker SiO ₂ layers . / Hinkle, C. L.; Fulton, C.; Nemanich, R. J. et al.
In: Applied Surface Science, Vol. 234, No. 1-4, 15.07.2004, p. 240-245.

Research output: Contribution to journal › Conference article › peer-review

Hinkle, CL, Fulton, C, Nemanich, RJ & Lucovsky, G 2004, ' Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO ₂ layers sandwiched between thicker SiO ₂ layers ', Applied Surface Science, vol. 234, no. 1-4, pp. 240-245. https://doi.org/10.1016/j.apsusc.2004.05.076

Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO ₂ layers sandwiched between thicker SiO ₂ layers Applied Surface Science. 2004 Jul 15;234(1-4):240-245. doi: 10.1016/j.apsusc.2004.05.076

Hinkle, C. L. ; Fulton, C. ; Nemanich, R. J. et al. / Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO ₂ layers sandwiched between thicker SiO ₂ layers In: Applied Surface Science. 2004 ; Vol. 234, No. 1-4. pp. 240-245.

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abstract = " There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, E B , and the effective electron tunneling mass, m eff , which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.",

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