Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions

Xiaoting Wang; Le Huang; Yuting Peng; Nengjie Huo; Kedi Wu; Congxin Xia; Zhongming Wei; Sefaattin Tongay; Jingbo Li

doi:10.1007/s12274-015-0932-6

Enhanced rectification, transport property and photocurrent generation of multilayer ReSe₂/MoS₂ p–n heterojunctions

Xiaoting Wang, Le Huang, Yuting Peng, Nengjie Huo, Kedi Wu, Congxin Xia, Zhongming Wei, Sefaattin Tongay, Jingbo Li

Research output: Contribution to journal › Article › peer-review

129 Scopus citations

Abstract

Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX₂ ReSe₂ and n-type hexagonal MoS₂ nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (R_λ) and external quantum efficiency (EQE) of 6.75 A/W and 1,266%, respectively, for the photodetector. [Figure not available: see fulltext.]

Original language	English (US)
Pages (from-to)	507-516
Number of pages	10
Journal	Nano Research
Volume	9
Issue number	2
DOIs	https://doi.org/10.1007/s12274-015-0932-6
State	Published - Feb 1 2016

Keywords

ReSe/MoS
optoelectronic properties
rectification
van der Waals heterojunction

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s12274-015-0932-6

Cite this

@article{780678bdedab4b53b0514f750c495bc9,

title = "Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions",

abstract = "Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (Rλ) and external quantum efficiency (EQE) of 6.75 A/W and 1,266%, respectively, for the photodetector. [Figure not available: see fulltext.]",

keywords = "ReSe/MoS, optoelectronic properties, rectification, van der Waals heterojunction",

author = "Xiaoting Wang and Le Huang and Yuting Peng and Nengjie Huo and Kedi Wu and Congxin Xia and Zhongming Wei and Sefaattin Tongay and Jingbo Li",

note = "Funding Information: This work was supported by the “Hundred Talents Program” of Chinese Academy of Sciences (CAS), the National Natural Science Foundation of China (No. 91233120), and the CAS/SAFEA International Partnership Program for Creative Research Teams. Publisher Copyright: {\textcopyright} 2015, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.",

year = "2016",

month = feb,

day = "1",

doi = "10.1007/s12274-015-0932-6",

language = "English (US)",

volume = "9",

pages = "507--516",

journal = "Nano Research",

issn = "1998-0124",

publisher = "Press of Tsinghua University",

number = "2",

}

TY - JOUR

T1 - Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions

AU - Wang, Xiaoting

AU - Huang, Le

AU - Peng, Yuting

AU - Huo, Nengjie

AU - Wu, Kedi

AU - Xia, Congxin

AU - Wei, Zhongming

AU - Tongay, Sefaattin

AU - Li, Jingbo

N1 - Funding Information: This work was supported by the “Hundred Talents Program” of Chinese Academy of Sciences (CAS), the National Natural Science Foundation of China (No. 91233120), and the CAS/SAFEA International Partnership Program for Creative Research Teams. Publisher Copyright: © 2015, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (Rλ) and external quantum efficiency (EQE) of 6.75 A/W and 1,266%, respectively, for the photodetector. [Figure not available: see fulltext.]

AB - Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (Rλ) and external quantum efficiency (EQE) of 6.75 A/W and 1,266%, respectively, for the photodetector. [Figure not available: see fulltext.]

KW - ReSe/MoS

KW - optoelectronic properties

KW - rectification

KW - van der Waals heterojunction

UR - http://www.scopus.com/inward/record.url?scp=84958117502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958117502&partnerID=8YFLogxK

U2 - 10.1007/s12274-015-0932-6

DO - 10.1007/s12274-015-0932-6

M3 - Article

AN - SCOPUS:84958117502

SN - 1998-0124

VL - 9

SP - 507

EP - 516

JO - Nano Research

JF - Nano Research

IS - 2

ER -