Enhanced performance and thermal stability of a-Si:H TFTs

A. Indluru; Terry Alford

doi:10.1149/1.3501989

Enhanced performance and thermal stability of a-Si:H TFTs

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Abstract

We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.

Original language	English (US)
Pages (from-to)	H467-H470
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	12
DOIs	https://doi.org/10.1149/1.3501989
State	Published - Oct 29 2010

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{a13a97280dce4499b0f801eed72745c8,

title = "Enhanced performance and thermal stability of a-Si:H TFTs",

abstract = "We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.",

author = "A. Indluru and Terry Alford",

year = "2010",

month = oct,

day = "29",

doi = "10.1149/1.3501989",

language = "English (US)",

volume = "13",

pages = "H467--H470",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Enhanced performance and thermal stability of a-Si:H TFTs

AU - Indluru, A.

AU - Alford, Terry

PY - 2010/10/29

Y1 - 2010/10/29

N2 - We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.

AB - We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.

UR - http://www.scopus.com/inward/record.url?scp=77958491327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958491327&partnerID=8YFLogxK

U2 - 10.1149/1.3501989

DO - 10.1149/1.3501989

M3 - Article

AN - SCOPUS:77958491327

SN - 1099-0062

VL - 13

SP - H467-H470

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Enhanced performance and thermal stability of a-Si:H TFTs

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