Emerging Memory Devices: Assessment and Benchmarking

Matthew J. Marinella; Victor V. Zhirnov

doi:10.1002/9781118958254.ch13

Emerging Memory Devices: Assessment and Benchmarking

Matthew J. Marinella, Victor V. Zhirnov

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Scopus citations

Abstract

This chapter provides an overview of the key emerging memory device technologies, including a description of the operational principals, state of the art for the technology, and key research challenges. Devices covered include redox (resistive), ferroelectric, Mott, macromolecular, molecular, and carbon memories. Future prospects of these technologies are assessed and benchmarked with regard to their possible target applications, such as storage class memory, NAND flash, and DRAM replacement.

Original language	English (US)
Title of host publication	Emerging Nanoelectronic Devices
Publisher	Wiley-Blackwell
Pages	246-276
Number of pages	31
Volume	9781118447741
ISBN (Electronic)	9781118958254
ISBN (Print)	9781118447741
DOIs	https://doi.org/10.1002/9781118958254.ch13
State	Published - Jan 27 2015
Externally published	Yes

Keywords

Carbon memory
Emerging memory
Ferroelectric memory
Macromolecular memory
Mott memory resistive memory
Scaling limits
Switching energy

ASJC Scopus subject areas

General Engineering

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10.1002/9781118958254.ch13

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@inbook{5f64bb0949ba45c8ad696fee32888509,

title = "Emerging Memory Devices: Assessment and Benchmarking",

abstract = "This chapter provides an overview of the key emerging memory device technologies, including a description of the operational principals, state of the art for the technology, and key research challenges. Devices covered include redox (resistive), ferroelectric, Mott, macromolecular, molecular, and carbon memories. Future prospects of these technologies are assessed and benchmarked with regard to their possible target applications, such as storage class memory, NAND flash, and DRAM replacement.",

keywords = "Carbon memory, Emerging memory, Ferroelectric memory, Macromolecular memory, Mott memory resistive memory, Scaling limits, Switching energy",

author = "Marinella, {Matthew J.} and Zhirnov, {Victor V.}",

note = "Publisher Copyright: {\textcopyright} 2015 John Wiley and Sons Ltd.",

year = "2015",

month = jan,

day = "27",

doi = "10.1002/9781118958254.ch13",

language = "English (US)",

isbn = "9781118447741",

volume = "9781118447741",

pages = "246--276",

booktitle = "Emerging Nanoelectronic Devices",

publisher = "Wiley-Blackwell",

}

TY - CHAP

T1 - Emerging Memory Devices

T2 - Assessment and Benchmarking

AU - Marinella, Matthew J.

AU - Zhirnov, Victor V.

PY - 2015/1/27

Y1 - 2015/1/27

N2 - This chapter provides an overview of the key emerging memory device technologies, including a description of the operational principals, state of the art for the technology, and key research challenges. Devices covered include redox (resistive), ferroelectric, Mott, macromolecular, molecular, and carbon memories. Future prospects of these technologies are assessed and benchmarked with regard to their possible target applications, such as storage class memory, NAND flash, and DRAM replacement.

AB - This chapter provides an overview of the key emerging memory device technologies, including a description of the operational principals, state of the art for the technology, and key research challenges. Devices covered include redox (resistive), ferroelectric, Mott, macromolecular, molecular, and carbon memories. Future prospects of these technologies are assessed and benchmarked with regard to their possible target applications, such as storage class memory, NAND flash, and DRAM replacement.

KW - Carbon memory

KW - Emerging memory

KW - Ferroelectric memory

KW - Macromolecular memory

KW - Mott memory resistive memory

KW - Scaling limits

KW - Switching energy

UR - http://www.scopus.com/inward/record.url?scp=84926429777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926429777&partnerID=8YFLogxK

U2 - 10.1002/9781118958254.ch13

DO - 10.1002/9781118958254.ch13

M3 - Chapter

AN - SCOPUS:84926429777

SN - 9781118447741

VL - 9781118447741

SP - 246

EP - 276

BT - Emerging Nanoelectronic Devices

PB - Wiley-Blackwell

ER -

Emerging Memory Devices: Assessment and Benchmarking

Abstract

Keywords

ASJC Scopus subject areas

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