In this brief, we report on the effects of the spatial and temperature dependence of the thermal conductivity in thin Si films on the electrothermal simulation of nanoscale silicon-on-insulator (SOI) devices. The electrothermal simulator is based on a combined ensemble Monte Carlo device simulator coupled to moment expansion of the phonon Boltzmann transport equations. In particular, we account for boundary scattering and the finite thickness of the SOI layer in reducing its thermal conductivity. The reduced thermal conductivity leads to a higher hot spot temperature in the device, with a corresponding degradation of the sourcedrain current.

Original languageEnglish (US)
Article number5409558
Pages (from-to)726-728
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Mar 2010


  • Lattice heating
  • Particle-based device simulations
  • Self-heating effects
  • Silicon-on-insulator (SOI) devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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