Electroplating of aluminium on silicon in an ionic liquid

Wen Cheng Sun; Xiaofei Han; Meng Tao

doi:10.1149/2.0021504eel

Electroplating of aluminium on silicon in an ionic liquid

Wen Cheng Sun, Xiaofei Han, Meng Tao

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10^-6 Ωcm range can be reproducibly obtained directly on Si substrates.

Original language	English (US)
Pages (from-to)	D5-D7
Journal	ECS Electrochemistry Letters
Volume	4
Issue number	4
DOIs	https://doi.org/10.1149/2.0021504eel
State	Published - 2015

ASJC Scopus subject areas

Fuel Technology
Electrochemistry
Materials Chemistry

Access to Document

10.1149/2.0021504eel

Cite this

@article{2ce5ad10765c4b0eb9b5518095197261,

title = "Electroplating of aluminium on silicon in an ionic liquid",

abstract = "Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10-6 Ωcm range can be reproducibly obtained directly on Si substrates.",

author = "Sun, {Wen Cheng} and Xiaofei Han and Meng Tao",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2015. Published by ECS.",

year = "2015",

doi = "10.1149/2.0021504eel",

language = "English (US)",

volume = "4",

pages = "D5--D7",

journal = "ECS Electrochemistry Letters",

issn = "2162-8726",

publisher = "The Electrochemical Society",

number = "4",

}

TY - JOUR

T1 - Electroplating of aluminium on silicon in an ionic liquid

AU - Sun, Wen Cheng

AU - Han, Xiaofei

AU - Tao, Meng

N1 - Publisher Copyright: © The Author(s) 2015. Published by ECS.

PY - 2015

Y1 - 2015

N2 - Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10-6 Ωcm range can be reproducibly obtained directly on Si substrates.

AB - Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10-6 Ωcm range can be reproducibly obtained directly on Si substrates.

UR - http://www.scopus.com/inward/record.url?scp=84924065458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84924065458&partnerID=8YFLogxK

U2 - 10.1149/2.0021504eel

DO - 10.1149/2.0021504eel

M3 - Article

AN - SCOPUS:84924065458

SN - 2162-8726

VL - 4

SP - D5-D7

JO - ECS Electrochemistry Letters

JF - ECS Electrochemistry Letters

IS - 4

ER -

Electroplating of aluminium on silicon in an ionic liquid

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this