Electronic structure of ideal metal/GaAs contacts

Mark Van Schilfgaarde, N. Newman

Research output: Contribution to journalArticlepeer-review

51 Scopus citations


The electronic structure of seven ideal metal/GaAs interfaces is calculated self-consistently, within the local-density approximation. Calculated pinning positions ranged from 0.3 to 1 eV above the valence-band maximum. The metal d electorns are found to play a significant role in the electronic structure of the ideal interface, and in determining the Schottky-barrier height. These calculations contradict models that invoke intrinsic interface states to explain the experimentally observed Fermi-level pinning.

Original languageEnglish (US)
Pages (from-to)2728-2731
Number of pages4
JournalPhysical Review Letters
Issue number21
StatePublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Electronic structure of ideal metal/GaAs contacts'. Together they form a unique fingerprint.

Cite this