Electronic Raman scattering from Mg-doped wurtzite GaN

Kong-Thon Tsen; C. Koch; Y. Chen; H. Morkoc; J. Li; J. Y. Lin; H. X. Jiang

Electronic Raman scattering from Mg-doped wurtzite GaN

Kong-Thon Tsen, C. Koch, Y. Chen, H. Morkoc, J. Li, J. Y. Lin, H. X. Jiang

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm ^-1) observed for the first time at around 841cm ^-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E _b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Volume	595
State	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 28 1999 → Dec 3 1999

Other

Other	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'
City	Boston, MA, USA
Period	11/28/99 → 12/3/99

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{3412f65a391045378832528bc56c73ed,

title = "Electronic Raman scattering from Mg-doped wurtzite GaN",

abstract = "Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm -1) observed for the first time at around 841cm -1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy. ",

author = "Kong-Thon Tsen and C. Koch and Y. Chen and H. Morkoc and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2000",

language = "English (US)",

volume = "595",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

}

TY - GEN

T1 - Electronic Raman scattering from Mg-doped wurtzite GaN

AU - Tsen, Kong-Thon

AU - Koch, C.

AU - Chen, Y.

AU - Morkoc, H.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000

Y1 - 2000

N2 - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm -1) observed for the first time at around 841cm -1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

AB - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm -1) observed for the first time at around 841cm -1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

UR - http://www.scopus.com/inward/record.url?scp=0033720115&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033720115&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033720115

VL - 595

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 28 November 1999 through 3 December 1999

ER -

Electronic Raman scattering from Mg-doped wurtzite GaN

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this