@article{964ead8731c24853948c80f2d78e4317,
title = "Electronic and optical switching of solution-phase deposited SnSe 2 phase change memory material",
abstract = "We report the use of chalcogenidometallate clusters as a solution-processable precursor to SnSe2 for phase change memory applications. This precursor is spin-coated onto substrates and then thermally decomposed into a crystalline SnSe2 film. Laser testing of our SnSe2 films indicate very fast recrystallization times of 20 ns. We also fabricate simple planar SnSe2 electronic switching devices that demonstrate switching between ON and OFF resistance states with resistance ratios varying from 7-76. The simple cell design resulted in poor cycling endurance. To demonstrate the precursor's applicability to advanced via-geometry memory devices, we use the precursor to create void-free SnSe2 structures inside nanowells of ∼25 nm in diameter and ∼40 nm in depth.",
author = "Wang, {Robert Y.} and Caldwell, {Marissa A.} and Jeyasingh, {Rakesh Gnana David} and Shaul Aloni and Shelby, {Robert M.} and Wong, {H. S.Philip} and Milliron, {Delia J.}",
note = "Funding Information: We thank Professor Matthias Wuttig of RWTH Aachen University of Technology and Dr. Simone Raoux of IBM T.J. Watson Research Center for helpful discussions. We also thank Xiuhong Han from Nanolab Technologies for FIB preparation of the TEM sample and Brett Helms of the Molecular Foundry for providing PS-PMMA random copolymer. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. MAC is supported by the Stanford Non-Volatile Memory Technology Initiative. Work was performed in part at the Stanford Nanofabrication Facility (a member of the National Nanotechnology Infrastructure Network) which is supported by the National Science Foundation under Grant ECS-9731293, its lab members, and the industrial members of the Stanford Center for Integrated Systems.",
year = "2011",
month = jun,
day = "1",
doi = "10.1063/1.3587187",
language = "English (US)",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}