Electron transport in narrow‐gap semiconductors

R. C. Curby, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


The electron transport properties of the narrow‐gap semiconductors InSb and InAs are calculated by a Monte Carlo procedure. The drift velocity and electron distribution function are found to be affected at high electric fields by the inclusion of impact ionization collisions, and the negative differential conductivity is correspondingly reduced.

Original languageEnglish (US)
Pages (from-to)569-575
Number of pages7
Journalphysica status solidi (a)
Issue number2
StatePublished - Dec 16 1973
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Electron transport in narrow‐gap semiconductors'. Together they form a unique fingerprint.

Cite this