We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering