Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

M. Yamada; K. Hirakawa; T. Odagiri; T. J. Thornton; T. Ikoma

doi:10.1016/0749-6036(92)90376-G

Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

M. Yamada, K. Hirakawa, T. Odagiri, T. J. Thornton, T. Ikoma

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.

Original language	English (US)
Pages (from-to)	261-264
Number of pages	4
Journal	Superlattices and Microstructures
Volume	11
Issue number	3
DOIs	https://doi.org/10.1016/0749-6036(92)90376-G
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0749-6036(92)90376-G

Cite this

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title = "Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation",

abstract = "We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.",

author = "M. Yamada and K. Hirakawa and T. Odagiri and Thornton, {T. J.} and T. Ikoma",

note = "Funding Information: ACKNOWLEDGEMENT - We thank Prof. Y. Iye, T. Saito. M. Noguchi, and L. Henrickson for fruitful discussions. This work was supported by the Grant-in-Aid from the Ministry of Education, Science, and Culture, Japan, and also supported by the Industry-university Joint Research Program “Mesoscopic Electronics.”",

year = "1992",

doi = "10.1016/0749-6036(92)90376-G",

language = "English (US)",

volume = "11",

pages = "261--264",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "3",

}

TY - JOUR

T1 - Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

AU - Yamada, M.

AU - Hirakawa, K.

AU - Odagiri, T.

AU - Thornton, T. J.

AU - Ikoma, T.

N1 - Funding Information: ACKNOWLEDGEMENT - We thank Prof. Y. Iye, T. Saito. M. Noguchi, and L. Henrickson for fruitful discussions. This work was supported by the Grant-in-Aid from the Ministry of Education, Science, and Culture, Japan, and also supported by the Industry-university Joint Research Program “Mesoscopic Electronics.”

PY - 1992

Y1 - 1992

N2 - We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.

AB - We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.

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VL - 11

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EP - 264

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

Abstract

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