Electron-phonon interaction of Wurtzite GaN and its effect on high field transport

Shinya Yamakawa; Joy M. Barker; Stephen Goodnick; David K. Ferry; Marco Saraniti

doi:10.1063/1.1994076

Electron-phonon interaction of Wurtzite GaN and its effect on high field transport

Shinya Yamakawa, Joy M. Barker, Stephen Goodnick, David K. Ferry, Marco Saraniti

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A full-band electron transport calculation in wurtzite phase GaN is reported based on a full model of the electron-phonon interaction within a Cellular Monte Carlo (CMC) approach. The deformation potential electron-phonon coupling is calculated directly from the electronic bandstructure and lattice dynamics via the rigid pseudo-ion model. A good overall agreement between theory and measured velocity-field data is obtained with this model including polar optical and piezoelectric phonon, impurity, and dislocation scattering.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	227-228
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994076
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	7/26/04 → 7/30/04

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1994076

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Electron-phonon interaction of Wurtzite GaN and its effect on high field transport. / Yamakawa, Shinya; Barker, Joy M.; Goodnick, Stephen et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 227-228 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamakawa, S, Barker, JM, Goodnick, S, Ferry, DK & Saraniti, M 2005, Electron-phonon interaction of Wurtzite GaN and its effect on high field transport. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 227-228, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994076

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AU - Saraniti, Marco

PY - 2005/6/30

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N2 - A full-band electron transport calculation in wurtzite phase GaN is reported based on a full model of the electron-phonon interaction within a Cellular Monte Carlo (CMC) approach. The deformation potential electron-phonon coupling is calculated directly from the electronic bandstructure and lattice dynamics via the rigid pseudo-ion model. A good overall agreement between theory and measured velocity-field data is obtained with this model including polar optical and piezoelectric phonon, impurity, and dislocation scattering.

AB - A full-band electron transport calculation in wurtzite phase GaN is reported based on a full model of the electron-phonon interaction within a Cellular Monte Carlo (CMC) approach. The deformation potential electron-phonon coupling is calculated directly from the electronic bandstructure and lattice dynamics via the rigid pseudo-ion model. A good overall agreement between theory and measured velocity-field data is obtained with this model including polar optical and piezoelectric phonon, impurity, and dislocation scattering.

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Electron-phonon interaction of Wurtzite GaN and its effect on high field transport

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