Abstract
Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 271-272 |
| Number of pages | 2 |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: Jul 19 1998 → Jul 24 1998 |
Other
| Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
|---|---|
| City | Asheville, NC, USA |
| Period | 7/19/98 → 7/24/98 |
ASJC Scopus subject areas
- Surfaces and Interfaces
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