Abstract
We present a study of the electron-electron interaction in n-silicon, utilizing the full dielectric function to determine the contribution of the electron-plasmon scattering terms. An Ensemble Monte Carlo is used to investigate the effects of this interaction on the transient dynamic response of electrons under high electric fields.
Original language | English (US) |
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Pages (from-to) | 594-596 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 46 |
Issue number | 6 |
DOIs | |
State | Published - 1985 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)