Electron and hole velocity overshoots in an Al 
            0.3Ga 
            0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy

W. Liang; Kong-Thon Tsen; D. K. Ferry

doi:10.1117/12.528339

Electron and hole velocity overshoots in an Al _0.3Ga _0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy

W. Liang
, Kong-Thon Tsen
, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al _0.3Ga _0.7 As -based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	K.T. Tsen, J.J. Song, H. Jiang
Pages	412-421
Number of pages	10
Volume	5352
DOIs	https://doi.org/10.1117/12.528339
State	Published - 2004
Event	Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States Duration: Jan 26 2004 → Jan 29 2004

Other

Other	Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Country/Territory	United States
City	San Jose, CA
Period	1/26/04 → 1/29/04

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.528339

Cite this

Liang, W., Tsen, K.-T., & Ferry, D. K. (2004). Electron and hole velocity overshoots in an Al _0.3Ga _0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy In K. T. Tsen, J. J. Song, & H. Jiang (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5352, pp. 412-421) https://doi.org/10.1117/12.528339

Electron and hole velocity overshoots in an Al _0.3Ga _0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy . / Liang, W.; Tsen, Kong-Thon; Ferry, D. K.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; J.J. Song; H. Jiang. Vol. 5352 2004. p. 412-421.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liang, W, Tsen, K-T & Ferry, DK 2004, Electron and hole velocity overshoots in an Al _0.3Ga _0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy in KT Tsen, JJ Song & H Jiang (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5352, pp. 412-421, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, San Jose, CA, United States, 1/26/04. https://doi.org/10.1117/12.528339

Liang W, Tsen KT, Ferry DK. Electron and hole velocity overshoots in an Al _0.3Ga _0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy In Tsen KT, Song JJ, Jiang H, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5352. 2004. p. 412-421 doi: 10.1117/12.528339

Liang, W. ; Tsen, Kong-Thon ; Ferry, D. K. / Electron and hole velocity overshoots in an Al _0.3Ga _0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy Proceedings of SPIE - The International Society for Optical Engineering. editor / K.T. Tsen ; J.J. Song ; H. Jiang. Vol. 5352 2004. pp. 412-421

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