TY - GEN
T1 - Electron and hole partial specific resistances
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
AU - Onno, Arthur
AU - Chen, Christopher
AU - Holman, Zachary C.
N1 - Funding Information:
The information, data, or work presented herein is funded in part by the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, under Award Numbers DE-EE0007552 and DE-EE0008552. Funding was also provided by the National Science Foundation under award No. 1846685.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - In order to understand how contacts influence the performance of solar cells, we previously developed and presented the concept of partial specific resistances: for each contact of a solar cell, we defined voltage-dependent specific resistances to electrons and to holes. Although the connection between these partial specific resistances and the cell performance metrics at open circuit (iVoc and Voc) is straightforward, the relationship becomes more complex when current flows out of the cell, in particular at the maximum power point. In the present work, we investigate the dependence of these hole and electron specific resistances on implied voltage. We show that the shapes of these curves - and not simply the resistance values at the maximum power point, which do not correspond to the same injection level in every cell - dictate the cell efficiency.
AB - In order to understand how contacts influence the performance of solar cells, we previously developed and presented the concept of partial specific resistances: for each contact of a solar cell, we defined voltage-dependent specific resistances to electrons and to holes. Although the connection between these partial specific resistances and the cell performance metrics at open circuit (iVoc and Voc) is straightforward, the relationship becomes more complex when current flows out of the cell, in particular at the maximum power point. In the present work, we investigate the dependence of these hole and electron specific resistances on implied voltage. We show that the shapes of these curves - and not simply the resistance values at the maximum power point, which do not correspond to the same injection level in every cell - dictate the cell efficiency.
KW - PC1D simulations
KW - carrier-selective contact
KW - maximum power point
KW - partial specific resistance
KW - passivating contact
UR - http://www.scopus.com/inward/record.url?scp=85081599583&partnerID=8YFLogxK
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U2 - 10.1109/PVSC40753.2019.8980762
DO - 10.1109/PVSC40753.2019.8980762
M3 - Conference contribution
AN - SCOPUS:85081599583
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2329
EP - 2333
BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 16 June 2019 through 21 June 2019
ER -