Electroluminescence by impact excitation of excitons in a monolayer WSe2

Jiabin Feng, Yongzhuo Li, Song Fu, Zhang Jianxing, Hao Sun, Lin Gan, C. Z. Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We demonstrated exciton electroluminescence by impact excitation in a monolayer WSe2 based field effect transistor on SiO2/Si substrate at room temperature. Hot electrons or holes can be controlled as impact sources through the back gate.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2020
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580767
StatePublished - 2020
EventCLEO: Applications and Technology, CLEO_AT 2020 - Washington, United States
Duration: May 10 2020May 15 2020

Publication series

NameOptics InfoBase Conference Papers
VolumePart F181-CLEO-AT 2020
ISSN (Electronic)2162-2701


ConferenceCLEO: Applications and Technology, CLEO_AT 2020
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials


Dive into the research topics of 'Electroluminescence by impact excitation of excitons in a monolayer WSe2'. Together they form a unique fingerprint.

Cite this