Electroforming-free TaOx memristors using focused ion beam irradiations

J. L. Pacheco; D. L. Perry; D. R. Hughart; M. Marinella; E. Bielejec

doi:10.1007/s00339-018-2041-3

Electroforming-free TaOx memristors using focused ion beam irradiations

J. L. Pacheco
, D. L. Perry
, D. R. Hughart
, M. Marinella
, E. Bielejec

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer-level fabrication of fully formed operational memristors.

Original language	English (US)
Article number	626
Journal	Applied Physics A: Materials Science and Processing
Volume	124
Issue number	9
DOIs	https://doi.org/10.1007/s00339-018-2041-3
State	Published - Sep 1 2018
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1007/s00339-018-2041-3

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abstract = "We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer-level fabrication of fully formed operational memristors.",

author = "Pacheco, \{J. L.\} and Perry, \{D. L.\} and Hughart, \{D. R.\} and M. Marinella and E. Bielejec",

note = "Publisher Copyright: {\textcopyright} 2018, Springer-Verlag GmbH Germany, part of Springer Nature.",

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AU - Pacheco, J. L.

AU - Perry, D. L.

AU - Hughart, D. R.

AU - Marinella, M.

AU - Bielejec, E.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer-level fabrication of fully formed operational memristors.

AB - We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer-level fabrication of fully formed operational memristors.

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UR - https://www.scopus.com/pages/publications/85051732428#tab=citedBy

U2 - 10.1007/s00339-018-2041-3

DO - 10.1007/s00339-018-2041-3

M3 - Article

AN - SCOPUS:85051732428

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JO - Applied Physics A: Materials Science and Processing

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ER -

Electroforming-free TaOx memristors using focused ion beam irradiations

Abstract

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