Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

Chih Yang Chang; E. A. Douglas; Jinhyung Kim; Liu Lu; Chien Fong Lo; Byung Hwan Chu; D. J. Cheney; B. P. Gila; F. Ren; G. D. Via; David A. Cullen; Lin Zhou; David Smith; Soohwan Jang; S. J. Pearton

doi:10.1109/TDMR.2010.2103314

Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

Chih Yang Chang, E. A. Douglas, Jinhyung Kim, Liu Lu, Chien Fong Lo, Byung Hwan Chu, D. J. Cheney, B. P. Gila, F. Ren, G. D. Via, David A. Cullen, Lin Zhou, David Smith, Soohwan Jang, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.

Original language	English (US)
Article number	5678846
Pages (from-to)	187-193
Number of pages	7
Journal	IEEE Transactions on Device and Materials Reliability
Volume	11
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2010.2103314
State	Published - Mar 2011

Keywords

AlGaN
GaN
degradation
high-electron mobility transistor (HEMT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Access to Document

10.1109/TDMR.2010.2103314

Cite this

Chang, C. Y., Douglas, E. A., Kim, J., Lu, L., Lo, C. F., Chu, B. H., Cheney, D. J., Gila, B. P., Ren, F., Via, G. D., Cullen, D. A., Zhou, L., Smith, D., Jang, S., & Pearton, S. J. (2011). Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors. IEEE Transactions on Device and Materials Reliability, 11(1), 187-193. Article 5678846. https://doi.org/10.1109/TDMR.2010.2103314

Chang, CY, Douglas, EA, Kim, J, Lu, L, Lo, CF, Chu, BH, Cheney, DJ, Gila, BP, Ren, F, Via, GD, Cullen, DA, Zhou, L, Smith, D, Jang, S & Pearton, SJ 2011, 'Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors', IEEE Transactions on Device and Materials Reliability, vol. 11, no. 1, 5678846, pp. 187-193. https://doi.org/10.1109/TDMR.2010.2103314

@article{f73e08384b5e464c926bf971f57b9a46,

title = "Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors",

abstract = "The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.",

keywords = "AlGaN, GaN, degradation, high-electron mobility transistor (HEMT)",

author = "Chang, {Chih Yang} and Douglas, {E. A.} and Jinhyung Kim and Liu Lu and Lo, {Chien Fong} and Chu, {Byung Hwan} and Cheney, {D. J.} and Gila, {B. P.} and F. Ren and Via, {G. D.} and Cullen, {David A.} and Lin Zhou and David Smith and Soohwan Jang and Pearton, {S. J.}",

note = "Funding Information: Manuscript received June 1, 2010; revised July 10, 2010, November 23, 2010, and December 16, 2010; accepted December 22, 2010. Date of publication January 6, 2011; date of current version March 9, 2011. This work was supported in part by the AFOSR MURI monitored by Kitt Reinhardt and in part by Arizona State University under AFRL Contract FA8650-08-C-1395 (monitored by C. Bozada, WPAFB).",

year = "2011",

month = mar,

doi = "10.1109/TDMR.2010.2103314",

language = "English (US)",

volume = "11",

pages = "187--193",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

AU - Chang, Chih Yang

AU - Douglas, E. A.

AU - Kim, Jinhyung

AU - Lu, Liu

AU - Lo, Chien Fong

AU - Chu, Byung Hwan

AU - Cheney, D. J.

AU - Gila, B. P.

AU - Ren, F.

AU - Via, G. D.

AU - Cullen, David A.

AU - Zhou, Lin

AU - Smith, David

AU - Jang, Soohwan

AU - Pearton, S. J.

N1 - Funding Information: Manuscript received June 1, 2010; revised July 10, 2010, November 23, 2010, and December 16, 2010; accepted December 22, 2010. Date of publication January 6, 2011; date of current version March 9, 2011. This work was supported in part by the AFOSR MURI monitored by Kitt Reinhardt and in part by Arizona State University under AFRL Contract FA8650-08-C-1395 (monitored by C. Bozada, WPAFB).

PY - 2011/3

Y1 - 2011/3

N2 - The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.

AB - The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.

KW - AlGaN

KW - GaN

KW - degradation

KW - high-electron mobility transistor (HEMT)

UR - http://www.scopus.com/inward/record.url?scp=79952820168&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952820168&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2010.2103314

DO - 10.1109/TDMR.2010.2103314

M3 - Article

AN - SCOPUS:79952820168

SN - 1530-4388

VL - 11

SP - 187

EP - 193

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 1

M1 - 5678846

ER -

Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this