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Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
M. J. Gilbert, D. K. Ferry
Solid State Electronics Research Center (CSSER)
Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)
Research output
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Contribution to journal
›
Article
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peer-review
58
Scopus citations
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Dive into the research topics of 'Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors'. Together they form a unique fingerprint.
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Keyphrases
Ballistic
100%
Dopant
100%
MOSFET
100%
Three-dimensional Modeling
100%
Silicon-on-insulator
100%
Fully Depleted
100%
Dopant Atoms
50%
Device Characteristics
50%
Ballistic Transport
50%
MOSFET Device
50%
Quantum Simulation
50%
Electron Density
50%
FDSOI
50%
Silicon-on-insulator MOSFETs
50%
Quantum Mechanical Methods
50%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Dopants
100%
Silicon on Insulator
100%
Dimensional Modeling
100%
Carrier Concentration
33%
Material Science
Silicon
100%
Doping (Additives)
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Carrier Concentration
33%