Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

Yu I. Mazur; V. G. Dorogan; M. Benamara; M. E. Ware; M. Schmidbauer; G. G. Tarasov; Shane Johnson; X. Lu; S. Q. Yu; T. Tiedje; G. J. Salamo

doi:10.1088/0022-3727/46/6/065306

Effects of spatial confinement and layer disorder in photoluminescence of GaAs_1-xBi_x/GaAs heterostructures

Yu I. Mazur, V. G. Dorogan, M. Benamara, M. E. Ware, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, S. Q. Yu, T. Tiedje, G. J. Salamo

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Abstract

The structural and optical properties of a set of high-quality GaAs _1-xBi_x/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.

Original language	English (US)
Article number	065306
Journal	Journal of Physics D: Applied Physics
Volume	46
Issue number	6
DOIs	https://doi.org/10.1088/0022-3727/46/6/065306
State	Published - Feb 13 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/46/6/065306

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Mazur, Y. I., Dorogan, V. G., Benamara, M., Ware, M. E., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Yu, S. Q., Tiedje, T., & Salamo, G. J. (2013). Effects of spatial confinement and layer disorder in photoluminescence of GaAs_1-xBi_x/GaAs heterostructures. Journal of Physics D: Applied Physics, 46(6), Article 065306. https://doi.org/10.1088/0022-3727/46/6/065306

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abstract = "The structural and optical properties of a set of high-quality GaAs 1-xBix/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.",

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AU - Mazur, Yu I.

AU - Dorogan, V. G.

AU - Benamara, M.

AU - Ware, M. E.

AU - Schmidbauer, M.

AU - Tarasov, G. G.

AU - Johnson, Shane

AU - Lu, X.

AU - Yu, S. Q.

AU - Tiedje, T.

AU - Salamo, G. J.

PY - 2013/2/13

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AB - The structural and optical properties of a set of high-quality GaAs 1-xBix/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.

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Effects of spatial confinement and layer disorder in photoluminescence of GaAs_1-xBi_x/GaAs heterostructures

Abstract

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