Abstract
Radiation response comparisons of lateral PNP bipolar devices manufactured with and without emitter-tied field plates are presented. The experimental results reveal that the devices with an emitter-tied field plate have higher current gain prior to exposure to ionizing radiation. However, the use of an emitter-tied field plate in total dose environments may provide no higher reliability against current gain degradation after significant amounts of radiation exposure.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
| Editors | Anon |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 35-38 |
| Number of pages | 4 |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA Duration: Sep 27 1998 → Sep 29 1998 |
Other
| Other | Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
|---|---|
| City | Minneapolis, MN, USA |
| Period | 9/27/98 → 9/29/98 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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