Effective potentials and quantum fluid models: A thermodynamic approach

Christian Ringhofer; Carl Gardner; Dragica Vasileska

doi:10.1142/S0129156403002022

Effective potentials and quantum fluid models: A thermodynamic approach

Christian Ringhofer, Carl Gardner, Dragica Vasileska

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. This approach leads to a modified Boltzmann equation with a quantum corrected force term and to quantum corrected fluid, or quantum hydrodynamic models. We present the quantum interaction of electrons with a gate oxide barrier potential and quantum hydrodynamic simulations of a resonant tunneling diode as application examples.

Original language	English (US)
Pages (from-to)	771-801
Number of pages	31
Journal	International Journal of High Speed Electronics and Systems
Volume	13
Issue number	3
DOIs	https://doi.org/10.1142/S0129156403002022
State	Published - Sep 2003

Keywords

Effective potentials
Quantum hydrodynamics
Quantum thermodynamics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

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10.1142/S0129156403002022

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title = "Effective potentials and quantum fluid models: A thermodynamic approach",

abstract = "We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. This approach leads to a modified Boltzmann equation with a quantum corrected force term and to quantum corrected fluid, or quantum hydrodynamic models. We present the quantum interaction of electrons with a gate oxide barrier potential and quantum hydrodynamic simulations of a resonant tunneling diode as application examples.",

keywords = "Effective potentials, Quantum hydrodynamics, Quantum thermodynamics",

author = "Christian Ringhofer and Carl Gardner and Dragica Vasileska",

note = "Funding Information: ∗This work was supported by NSF grant DECS-0218008. †This work was supported by NSF grant DECS-0218008.",

year = "2003",

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AU - Ringhofer, Christian

AU - Gardner, Carl

AU - Vasileska, Dragica

N1 - Funding Information: ∗This work was supported by NSF grant DECS-0218008. †This work was supported by NSF grant DECS-0218008.

PY - 2003/9

Y1 - 2003/9

N2 - We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. This approach leads to a modified Boltzmann equation with a quantum corrected force term and to quantum corrected fluid, or quantum hydrodynamic models. We present the quantum interaction of electrons with a gate oxide barrier potential and quantum hydrodynamic simulations of a resonant tunneling diode as application examples.

AB - We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. This approach leads to a modified Boltzmann equation with a quantum corrected force term and to quantum corrected fluid, or quantum hydrodynamic models. We present the quantum interaction of electrons with a gate oxide barrier potential and quantum hydrodynamic simulations of a resonant tunneling diode as application examples.

KW - Effective potentials

KW - Quantum hydrodynamics

KW - Quantum thermodynamics

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IS - 3

ER -

Effective potentials and quantum fluid models: A thermodynamic approach

Abstract

Keywords

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