Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate

H. Han; J. W. Mayer; Terry Alford

doi:10.1063/1.2204815

Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate

H. Han, J. W. Mayer, Terry Alford

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Abstract

The effect of different annealing ambients on the electrical and optical properties of indium tin oxide (ITO) on polyethylene napthalate (PEN) has been investigated. ITO layers of different carrier concentrations have been prepared by radio frequency sputtering followed by annealing in either 5% H ₂/Ar, oxygen, or air at 150°C for 2 h. The carrier concentration of the ITO films increased with heat treatment in the 5% H ₂/Ar ambient. However, the carrier concentration of the ITO films decreased with heat treatment in oxygen and air atmospheres, respectively. Different annealing ambients affect the electrical properties of ITO/PEN samples by changing the oxygen vacancy in the ITO layer. Electrical mobilities were found to be affected by the carrier concentration. These experimental mobility values were in good agreement with those obtained from a theoretical ionized impurity scattering mechanism model. Optical transmittances of ∼86% were obtained for the ITO thin films and the optical band gap is about 3.15 eV for all ITO films on PEN substrates.

Original language	English (US)
Article number	123711
Journal	Journal of Applied Physics
Volume	99
Issue number	12
DOIs	https://doi.org/10.1063/1.2204815
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2204815

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title = "Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate",

abstract = "The effect of different annealing ambients on the electrical and optical properties of indium tin oxide (ITO) on polyethylene napthalate (PEN) has been investigated. ITO layers of different carrier concentrations have been prepared by radio frequency sputtering followed by annealing in either 5% H 2/Ar, oxygen, or air at 150°C for 2 h. The carrier concentration of the ITO films increased with heat treatment in the 5% H 2/Ar ambient. However, the carrier concentration of the ITO films decreased with heat treatment in oxygen and air atmospheres, respectively. Different annealing ambients affect the electrical properties of ITO/PEN samples by changing the oxygen vacancy in the ITO layer. Electrical mobilities were found to be affected by the carrier concentration. These experimental mobility values were in good agreement with those obtained from a theoretical ionized impurity scattering mechanism model. Optical transmittances of ∼86% were obtained for the ITO thin films and the optical band gap is about 3.15 eV for all ITO films on PEN substrates.",

author = "H. Han and Mayer, {J. W.} and Terry Alford",

note = "Funding Information: This work was partially supported by National Science Foundation (L. Hess, Grant No. DMR-0308127), to whom the authors are greatly indebted. The authors would also like to thank Yeongseok Zoo and Professor. N. Newman for assistance with this work. This research was sponsored by the Army Research Laboratory (ARL) and was accomplished under Cooperative Agreement No. W911NG-04-2-0005. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation herein. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2006",

doi = "10.1063/1.2204815",

language = "English (US)",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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AU - Han, H.

AU - Mayer, J. W.

AU - Alford, Terry

N1 - Funding Information: This work was partially supported by National Science Foundation (L. Hess, Grant No. DMR-0308127), to whom the authors are greatly indebted. The authors would also like to thank Yeongseok Zoo and Professor. N. Newman for assistance with this work. This research was sponsored by the Army Research Laboratory (ARL) and was accomplished under Cooperative Agreement No. W911NG-04-2-0005. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation herein. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2006

Y1 - 2006

N2 - The effect of different annealing ambients on the electrical and optical properties of indium tin oxide (ITO) on polyethylene napthalate (PEN) has been investigated. ITO layers of different carrier concentrations have been prepared by radio frequency sputtering followed by annealing in either 5% H 2/Ar, oxygen, or air at 150°C for 2 h. The carrier concentration of the ITO films increased with heat treatment in the 5% H 2/Ar ambient. However, the carrier concentration of the ITO films decreased with heat treatment in oxygen and air atmospheres, respectively. Different annealing ambients affect the electrical properties of ITO/PEN samples by changing the oxygen vacancy in the ITO layer. Electrical mobilities were found to be affected by the carrier concentration. These experimental mobility values were in good agreement with those obtained from a theoretical ionized impurity scattering mechanism model. Optical transmittances of ∼86% were obtained for the ITO thin films and the optical band gap is about 3.15 eV for all ITO films on PEN substrates.

AB - The effect of different annealing ambients on the electrical and optical properties of indium tin oxide (ITO) on polyethylene napthalate (PEN) has been investigated. ITO layers of different carrier concentrations have been prepared by radio frequency sputtering followed by annealing in either 5% H 2/Ar, oxygen, or air at 150°C for 2 h. The carrier concentration of the ITO films increased with heat treatment in the 5% H 2/Ar ambient. However, the carrier concentration of the ITO films decreased with heat treatment in oxygen and air atmospheres, respectively. Different annealing ambients affect the electrical properties of ITO/PEN samples by changing the oxygen vacancy in the ITO layer. Electrical mobilities were found to be affected by the carrier concentration. These experimental mobility values were in good agreement with those obtained from a theoretical ionized impurity scattering mechanism model. Optical transmittances of ∼86% were obtained for the ITO thin films and the optical band gap is about 3.15 eV for all ITO films on PEN substrates.

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Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate

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