EFFECT OF TRANSIENT ANNEALING ON GRAIN GROWTH AND STRUCTURE OF POLYCRYSTALLINE SILICON FILMS.

Stephen Krause, S. R. Wilson, W. M. Paulson, R. B. Gregory

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transient annealing effects on the grain size, structure and morphology of B and As implanted films of polycrystalline silicon were determined by transmission electron microscopy. Originally, grains had a bimodal distribution of smaller equiaxed grains and larger columnar grains. The growth of both types of grains was described with a modified model for interfacial energy driven grain growth. Bend contours in annealed unimplanted films were not present in annealed ion implanted films due to formation of a cellular network structure in the grains.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages105-110
Number of pages6
Edition76
StatePublished - Dec 1 1985

Publication series

NameInstitute of Physics Conference Series
Number76
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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