Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material

Stephen Krause; J. C. Park; J. D. Lee; M. El-Ghor; P. Roitman

doi:10.1109/SOI.1992.664804

Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material

Stephen Krause, J. C. Park, J. D. Lee, M. El-Ghor, P. Roitman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	1992 IEEE International SOI Conference, SOI 1992 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	80-81
Number of pages	2
ISBN (Electronic)	0780307763
DOIs	https://doi.org/10.1109/SOI.1992.664804
State	Published - 1992
Event	1992 IEEE International SOI Conference, SOI 1992 - Ponte Vedra Beach, United States Duration: Oct 6 1992 → Oct 8 1992

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	1992 IEEE International SOI Conference, SOI 1992
Country/Territory	United States
City	Ponte Vedra Beach
Period	10/6/92 → 10/8/92

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SOI.1992.664804

Cite this

Krause, S., Park, J. C., Lee, J. D., El-Ghor, M., & Roitman, P. (1992). Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material. In 1992 IEEE International SOI Conference, SOI 1992 - Proceedings (pp. 80-81). Article 664804 (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.1992.664804

Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material. / Krause, Stephen; Park, J. C.; Lee, J. D. et al.
1992 IEEE International SOI Conference, SOI 1992 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 1992. p. 80-81 664804 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Krause, S, Park, JC, Lee, JD, El-Ghor, M & Roitman, P 1992, Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material. in 1992 IEEE International SOI Conference, SOI 1992 - Proceedings., 664804, Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers Inc., pp. 80-81, 1992 IEEE International SOI Conference, SOI 1992, Ponte Vedra Beach, United States, 10/6/92. https://doi.org/10.1109/SOI.1992.664804

Krause S, Park JC, Lee JD, El-Ghor M, Roitman P. Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material. In 1992 IEEE International SOI Conference, SOI 1992 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 1992. p. 80-81. 664804. (Proceedings - IEEE International SOI Conference). doi: 10.1109/SOI.1992.664804

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author = "Stephen Krause and Park, {J. C.} and Lee, {J. D.} and M. El-Ghor and P. Roitman",

year = "1992",

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Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material

Publication series

Conference

ASJC Scopus subject areas

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