Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

Jae Uk Lee, Deuk Hee Lee, Beomjin Kwon, Dow Bin Hyun, Sahn Nahm, Seung Hyub Baek, Jin Sang Kim

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 1019/cm3 to 2.4 × 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

Original languageEnglish (US)
Pages (from-to)1926-1930
Number of pages5
JournalJournal of Electronic Materials
Issue number6
StatePublished - Jun 1 2015
Externally publishedYes


  • Bismuth telluride
  • hot press
  • mechanical deformation
  • Sn doping
  • thermoelectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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