Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se                         2                          solar cells by XPS

D. S. Chen; J. Yang; F. Xu; P. H. Zhou; H. W. Du; J. W. Shi; Z. S. Yu; Y. H. Zhang; Brian Bartholomeusz; Z. Q. Ma

doi:10.1016/j.apsusc.2012.10.044

Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se ₂ solar cells by XPS

D. S. Chen, J. Yang, F. Xu, P. H. Zhou, H. W. Du, J. W. Shi, Z. S. Yu, Y. H. Zhang, Brian Bartholomeusz, Z. Q. Ma

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The effect of rapid thermal annealing (RTA) on the compositional ratio of atoms and interfacial zone of Cu(In,Ga)Se ₂ (CIGS) solar cells was systematically studied using X-ray photoelectron spectroscopy. The RTA treatment induced the diffusion of Al, Zn, and Se atoms, which increased the compositional ratio of these atoms in the corresponding layer. The ratio and characteristics of Cu/(In + Ga) and Ga/(In + Ga) were further modulated to attain higher efficiency in the devices. Furthermore, the width of the interfacial zone decreased at the Mo/CIGS interface because the diffusion depth of the Se atoms contracted from 1300 nm to 1200 nm. After RTA treatment, the absolute efficiency of the CIGS solar cells was enhanced by 1.2%. Our results suggest that RTA treatment reduces series resistance, optimizes the position of the minimum bandgap in the CIGS thin film, and improves the crystallinity of the CIGS thin film, which is responsible for the improvement in conversion efficiency.

Original language	English (US)
Pages (from-to)	459-463
Number of pages	5
Journal	Applied Surface Science
Volume	264
DOIs	https://doi.org/10.1016/j.apsusc.2012.10.044
State	Published - Jan 1 2013
Externally published	Yes

Keywords

Compositional ratio
Interface
Rapid thermal annealing
Solar cell

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Access to Document

10.1016/j.apsusc.2012.10.044

Cite this

Chen, D. S., Yang, J., Xu, F., Zhou, P. H., Du, H. W., Shi, J. W., Yu, Z. S., Zhang, Y. H., Bartholomeusz, B., & Ma, Z. Q. (2013). Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se ₂ solar cells by XPS Applied Surface Science, 264, 459-463. https://doi.org/10.1016/j.apsusc.2012.10.044

Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se ₂ solar cells by XPS . / Chen, D. S.; Yang, J.; Xu, F. et al.
In: Applied Surface Science, Vol. 264, 01.01.2013, p. 459-463.

Research output: Contribution to journal › Article › peer-review

Chen, DS, Yang, J, Xu, F, Zhou, PH, Du, HW, Shi, JW, Yu, ZS, Zhang, YH, Bartholomeusz, B & Ma, ZQ 2013, ' Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se ₂ solar cells by XPS ', Applied Surface Science, vol. 264, pp. 459-463. https://doi.org/10.1016/j.apsusc.2012.10.044

@article{5165ce905a824d0ba4bac3849f4b44a5,

title = " Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se 2 solar cells by XPS ",

abstract = " The effect of rapid thermal annealing (RTA) on the compositional ratio of atoms and interfacial zone of Cu(In,Ga)Se 2 (CIGS) solar cells was systematically studied using X-ray photoelectron spectroscopy. The RTA treatment induced the diffusion of Al, Zn, and Se atoms, which increased the compositional ratio of these atoms in the corresponding layer. The ratio and characteristics of Cu/(In + Ga) and Ga/(In + Ga) were further modulated to attain higher efficiency in the devices. Furthermore, the width of the interfacial zone decreased at the Mo/CIGS interface because the diffusion depth of the Se atoms contracted from 1300 nm to 1200 nm. After RTA treatment, the absolute efficiency of the CIGS solar cells was enhanced by 1.2%. Our results suggest that RTA treatment reduces series resistance, optimizes the position of the minimum bandgap in the CIGS thin film, and improves the crystallinity of the CIGS thin film, which is responsible for the improvement in conversion efficiency.",

keywords = "Compositional ratio, Interface, Rapid thermal annealing, Solar cell",

author = "Chen, {D. S.} and J. Yang and F. Xu and Zhou, {P. H.} and Du, {H. W.} and Shi, {J. W.} and Yu, {Z. S.} and Zhang, {Y. H.} and Brian Bartholomeusz and Ma, {Z. Q.}",

note = "Funding Information: This work was partly supported by the Natural Science Foundation of China (Nos. 60876045 and 61274067 ), the Shanghai Leading Basic Research Project (No. 09JC1405900 ), and the Shanghai Leading Academic Discipline Project (No. S30105 ), and the R&D Foundation of SHU-SOENs PV Joint Lab (No. SS-E0700601 ). Some of the measurements were conducted by the Analysis and Testing Center of Shanghai University. ",

year = "2013",

month = jan,

day = "1",

doi = "10.1016/j.apsusc.2012.10.044",

language = "English (US)",

volume = "264",

pages = "459--463",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se 2 solar cells by XPS

AU - Chen, D. S.

AU - Yang, J.

AU - Xu, F.

AU - Zhou, P. H.

AU - Du, H. W.

AU - Shi, J. W.

AU - Yu, Z. S.

AU - Zhang, Y. H.

AU - Bartholomeusz, Brian

AU - Ma, Z. Q.

N1 - Funding Information: This work was partly supported by the Natural Science Foundation of China (Nos. 60876045 and 61274067 ), the Shanghai Leading Basic Research Project (No. 09JC1405900 ), and the Shanghai Leading Academic Discipline Project (No. S30105 ), and the R&D Foundation of SHU-SOENs PV Joint Lab (No. SS-E0700601 ). Some of the measurements were conducted by the Analysis and Testing Center of Shanghai University.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The effect of rapid thermal annealing (RTA) on the compositional ratio of atoms and interfacial zone of Cu(In,Ga)Se 2 (CIGS) solar cells was systematically studied using X-ray photoelectron spectroscopy. The RTA treatment induced the diffusion of Al, Zn, and Se atoms, which increased the compositional ratio of these atoms in the corresponding layer. The ratio and characteristics of Cu/(In + Ga) and Ga/(In + Ga) were further modulated to attain higher efficiency in the devices. Furthermore, the width of the interfacial zone decreased at the Mo/CIGS interface because the diffusion depth of the Se atoms contracted from 1300 nm to 1200 nm. After RTA treatment, the absolute efficiency of the CIGS solar cells was enhanced by 1.2%. Our results suggest that RTA treatment reduces series resistance, optimizes the position of the minimum bandgap in the CIGS thin film, and improves the crystallinity of the CIGS thin film, which is responsible for the improvement in conversion efficiency.

AB - The effect of rapid thermal annealing (RTA) on the compositional ratio of atoms and interfacial zone of Cu(In,Ga)Se 2 (CIGS) solar cells was systematically studied using X-ray photoelectron spectroscopy. The RTA treatment induced the diffusion of Al, Zn, and Se atoms, which increased the compositional ratio of these atoms in the corresponding layer. The ratio and characteristics of Cu/(In + Ga) and Ga/(In + Ga) were further modulated to attain higher efficiency in the devices. Furthermore, the width of the interfacial zone decreased at the Mo/CIGS interface because the diffusion depth of the Se atoms contracted from 1300 nm to 1200 nm. After RTA treatment, the absolute efficiency of the CIGS solar cells was enhanced by 1.2%. Our results suggest that RTA treatment reduces series resistance, optimizes the position of the minimum bandgap in the CIGS thin film, and improves the crystallinity of the CIGS thin film, which is responsible for the improvement in conversion efficiency.

KW - Compositional ratio

KW - Interface

KW - Rapid thermal annealing

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=84870527185&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870527185&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2012.10.044

DO - 10.1016/j.apsusc.2012.10.044

M3 - Article

AN - SCOPUS:84870527185

SN - 0169-4332

VL - 264

SP - 459

EP - 463

JO - Applied Surface Science

JF - Applied Surface Science

ER -