TY - GEN
T1 - Effect of inactivated dopants clusters and processing parameters on electrical properties of indium tin oxide on plastic substrates
AU - Han, Hauk
AU - Lewis, Jay
AU - Alford, Terry
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100°C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical propeities such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.
AB - Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100°C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical propeities such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.
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M3 - Conference contribution
AN - SCOPUS:70350266365
SN - 9781605608556
T3 - Materials Research Society Symposium Proceedings
SP - 174
EP - 179
BT - Synthesis and Metrology of Nanoscale Oxides and Thin Films
T2 - 2008 MRS Spring Meeting
Y2 - 24 March 2008 through 28 March 2008
ER -