Effect of implant dose on formation of buried-oxide Si islands in low-dose SIMOX

Sandeep Bagchi, J. D. Lee, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


The effect of implant dose on the microstructural changes found during Si island formation in low-dose SIMOX was studied. It was found that, for 0.225E18 cm-2 sample, a continuous BOX did not form, whereas for the 0.45E18 cm-2 and 0.675E18 cm-2 samples, lateral coalescence of banded oxide layers was sufficient to form a continuous BOX. However, for the 0.675E18 cm-2 sample, there were 3 to 4 banded layers of oxide at 1200°C, which coalescence into two thicker banded layers at 1275°C. These two layers evidently trapped isolated regions of Si during their coalescence, which resulted in the formation of a high density of Si islands in the BOX. Conversely, in the 0.45E18 cm-2 sample, the 1 to 2 banded layers at 1200°C coalesced into a single banded layer at 1275°C, which then annealed into a single continuous film with very low density of Si islands.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Editors Anon
Place of PublicationPiscataway, NJ, United States
Number of pages2
StatePublished - 1995
EventProceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA
Duration: Oct 3 1995Oct 5 1995


OtherProceedings of the 1995 IEEE International SOI Conference
CityTucson, AZ, USA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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