Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC)

Mansoure Moeini Rizi; Pradeep Balaji; Bill Dauksher; Andre Augusto; Stephen Goodnick; Christiana B. Honsberg; Michael Goryll

doi:10.1109/PVSC43889.2021.9519124

Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC)

Mansoure Moeini Rizi, Pradeep Balaji, Bill Dauksher, Andre Augusto, Stephen Goodnick, Christiana B. Honsberg, Michael Goryll

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Annealing effects have been studied on test structures and TLM pads to determine the optimum final annealing time for fabricated interdigitated back contact (IBC) solar cells. Initial results show that passivation will recover after 3 min annealing at 200 °C but will degrade by further annealing. Contact resistance measurement performed on TLM structures both for emitter and base stack show that by increasing the annealing time the contact resistance will increase. Using the initial annealing time of 5 min, we obtain a short circuit current density of 37 mA/cm2 and open-circuit voltage of 691 mV, leading to a conversion efficiency of 19.3%.

Original language	English (US)
Title of host publication	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1541-1544
Number of pages	4
ISBN (Electronic)	9781665419222
DOIs	https://doi.org/10.1109/PVSC43889.2021.9519124
State	Published - Jun 20 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: Jun 20 2021 → Jun 25 2021

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	6/20/21 → 6/25/21

Keywords

annealing
interdigitated back contact solar cell
passivation
resistance

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC43889.2021.9519124

Cite this

Rizi, M. M., Balaji, P., Dauksher, B., Augusto, A., Goodnick, S., Honsberg, C. B., & Goryll, M. (2021). Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC). In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (pp. 1541-1544). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9519124

Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC). / Rizi, Mansoure Moeini; Balaji, Pradeep; Dauksher, Bill et al.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 1541-1544 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rizi, MM, Balaji, P, Dauksher, B, Augusto, A, Goodnick, S , Honsberg, CB & Goryll, M 2021, Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC). in 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1541-1544, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 6/20/21. https://doi.org/10.1109/PVSC43889.2021.9519124

Rizi MM, Balaji P, Dauksher B, Augusto A, Goodnick S , Honsberg CB et al. Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC). In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 1541-1544. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9519124

@inproceedings{58d2f25879224b4487e2d70bc6172a6f,

title = "Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC)",

abstract = "Annealing effects have been studied on test structures and TLM pads to determine the optimum final annealing time for fabricated interdigitated back contact (IBC) solar cells. Initial results show that passivation will recover after 3 min annealing at 200 °C but will degrade by further annealing. Contact resistance measurement performed on TLM structures both for emitter and base stack show that by increasing the annealing time the contact resistance will increase. Using the initial annealing time of 5 min, we obtain a short circuit current density of 37 mA/cm2 and open-circuit voltage of 691 mV, leading to a conversion efficiency of 19.3%.",

keywords = "annealing, interdigitated back contact solar cell, passivation, resistance",

author = "Rizi, {Mansoure Moeini} and Pradeep Balaji and Bill Dauksher and Andre Augusto and Stephen Goodnick and Honsberg, {Christiana B.} and Michael Goryll",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9519124",

language = "English (US)",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1541--1544",

booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",

}

TY - GEN

T1 - Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC)

AU - Rizi, Mansoure Moeini

AU - Balaji, Pradeep

AU - Dauksher, Bill

AU - Augusto, Andre

AU - Goodnick, Stephen

AU - Honsberg, Christiana B.

AU - Goryll, Michael

PY - 2021/6/20

Y1 - 2021/6/20

N2 - Annealing effects have been studied on test structures and TLM pads to determine the optimum final annealing time for fabricated interdigitated back contact (IBC) solar cells. Initial results show that passivation will recover after 3 min annealing at 200 °C but will degrade by further annealing. Contact resistance measurement performed on TLM structures both for emitter and base stack show that by increasing the annealing time the contact resistance will increase. Using the initial annealing time of 5 min, we obtain a short circuit current density of 37 mA/cm2 and open-circuit voltage of 691 mV, leading to a conversion efficiency of 19.3%.

AB - Annealing effects have been studied on test structures and TLM pads to determine the optimum final annealing time for fabricated interdigitated back contact (IBC) solar cells. Initial results show that passivation will recover after 3 min annealing at 200 °C but will degrade by further annealing. Contact resistance measurement performed on TLM structures both for emitter and base stack show that by increasing the annealing time the contact resistance will increase. Using the initial annealing time of 5 min, we obtain a short circuit current density of 37 mA/cm2 and open-circuit voltage of 691 mV, leading to a conversion efficiency of 19.3%.

KW - annealing

KW - interdigitated back contact solar cell

KW - passivation

KW - resistance

UR - http://www.scopus.com/inward/record.url?scp=85115920813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85115920813&partnerID=8YFLogxK

U2 - 10.1109/PVSC43889.2021.9519124

DO - 10.1109/PVSC43889.2021.9519124

M3 - Conference contribution

AN - SCOPUS:85115920813

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1541

EP - 1544

BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC)

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this