Dysprosium silicide nanowires on Si(110)

Zhian He; M. Stevens; David Smith; Peter Bennett

doi:10.1063/1.1636244

Dysprosium silicide nanowires on Si(110)

Zhian He, M. Stevens, David Smith, Peter Bennett

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

Dysprosium silicide was observed to form nanowires (NW) on Si(110) with a single orientation and a narrow, well-defined width. The single orientation and the NW shape were found to be dictated by the twofold symmetry of the substrate. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side. This type of growth represents a physical mechanism for self-assembled NW formation that does not require lattice mismatch.

Original language	English (US)
Pages (from-to)	5292-5294
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	25
DOIs	https://doi.org/10.1063/1.1636244
State	Published - Dec 22 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1636244

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AU - Smith, David

AU - Bennett, Peter

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AB - Dysprosium silicide was observed to form nanowires (NW) on Si(110) with a single orientation and a narrow, well-defined width. The single orientation and the NW shape were found to be dictated by the twofold symmetry of the substrate. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side. This type of growth represents a physical mechanism for self-assembled NW formation that does not require lattice mismatch.

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Dysprosium silicide nanowires on Si(110)

Abstract

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